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WNM4153-3

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WILLSEMI Will Semicon MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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WNM4153-3

WILLSEMI Will Semicon · MOSFETs · SOT-523

WNM4153-3 from WILLSEMI Will Semicon, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage limit of VGS = 6 V (absolute maximum rating).
2 S passive Source of the N-channel MOSFET; the datasheet gives no pin-specific limit and only lists the device-level absolute maximum ratings.
3 D passive Drain of the N-channel MOSFET; the datasheet gives a drain-source voltage limit of VDS = +20 V and a continuous drain current of 0.88 A at TA = 25°C (1 in² pad, steady state).

Key specifications

Parameter Value
Manufacturer WILLSEMI Will Semicon
Package SOT-523
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS=0V, ID=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=16V, VGS=0V 3
Gate-Source Leakage Current IGSS -5 5 uA VDS=0V, VGS=±5V 3
Gate Threshold Voltage VGS(th) 0.45 0.55 1 V VDS=VGS, ID=250uA 3
Drain-Source On-Resistance RDS(on) 220 310 mΩ VGS=4.5V, ID=0.55A 3
Drain-Source On-Resistance RDS(on) 260 360 mΩ VGS=2.5V, ID=0.45A 3
Drain-Source On-Resistance RDS(on) 320 460 mΩ VGS=1.8V, ID=0.35A 3
Forward Diode Voltage VSD 0.7 1.5 V VGS=0V, IS=0.35A 3
Drain-Source Voltage VDS 20 V TA=25°C unless otherwise noted 2
Gate-Source Voltage VGS 6 V TA=25°C unless otherwise noted 2
Continuous Drain Current (surface mounted on FR4, 1 sq in pad) ID 0.88 A TA=25°C, t≤10 s 2
Continuous Drain Current (surface mounted on FR4, 1 sq in pad) ID 0.8 A TA=25°C, steady state 2
Continuous Drain Current (surface mounted on FR4, 1 sq in pad) ID 0.71 A TA=70°C, t≤10 s 2
Continuous Drain Current (surface mounted on FR4, 1 sq in pad) ID 0.64 A TA=70°C, steady state 2
Continuous Drain Current (surface mounted on FR4, minimum pad) ID 0.76 A TA=25°C, t≤10 s 2
Continuous Drain Current (surface mounted on FR4, minimum pad) ID 0.69 A TA=25°C, steady state 2
Continuous Drain Current (surface mounted on FR4, minimum pad) ID 0.6 A TA=70°C, t≤10 s 2
Continuous Drain Current (surface mounted on FR4, minimum pad) ID 0.55 A TA=70°C, steady state 2
Maximum Power Dissipation (1 sq in pad) PD 0.37 W TA=25°C, t≤10 s 2
Maximum Power Dissipation (1 sq in pad) PD 0.3 W TA=25°C, steady state 2
Maximum Power Dissipation (1 sq in pad) PD 0.23 W TA=70°C, t≤10 s 2
Maximum Power Dissipation (1 sq in pad) PD 0.19 W TA=70°C, steady state 2
Maximum Power Dissipation (minimum pad) PD 0.27 W TA=25°C, t≤10 s 2
Maximum Power Dissipation (minimum pad) PD 0.22 W TA=25°C, steady state 2
Maximum Power Dissipation (minimum pad) PD 0.17 W TA=70°C, t≤10 s 2
Maximum Power Dissipation (minimum pad) PD 0.14 W TA=70°C, steady state 2
Pulsed Drain Current IDM 1.4 A tp=10µs, Duty Cycle=1% 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Ambient Thermal Resistance (1 sq in pad) RθJA 285 335 °C/W t≤10 s 2
Junction-to-Ambient Thermal Resistance (1 sq in pad) RθJA 340 405 °C/W Steady state 2
Junction-to-Ambient Thermal Resistance (minimum pad) RθJA 385 450 °C/W t≤10 s 2
Junction-to-Ambient Thermal Resistance (minimum pad) RθJA 455 545 °C/W Steady state 2
Junction-to-Case Thermal Resistance RθJC 260 300 °C/W Steady state 2
Forward Transconductance gFS 1 S VDS=10V, ID=0.4A 3
Input Capacitance Ciss 68 pF VDS=10V, VGS=0V, f=100kHz 3
Output Capacitance Coss 9 pF VDS=10V, VGS=0V, f=100kHz 3
Reverse Transfer Capacitance Crss 7.5 pF VDS=10V, VGS=0V, f=100kHz 3
Total Gate Charge QG(TOT) 1.15 nC VDS=10V, VGS=4.5V, ID=0.55A 3
Threshold Gate Charge QG(TH) 0.06 nC 3
Gate-Source Charge QGS 0.15 nC 3
Gate-Drain Charge QGD 0.23 nC VDS=10V, VGS=4.5V, ID=0.55A 3
Turn-On Delay Time td(on) 22 ns 3
Turn-On Rise Time tr 80 ns 3
Turn-Off Delay Time td(off) 700 ns VDD=10V, VGS=4.5V, ID=0.55A, RG=6Ω 3
Turn-Off Fall Time tf 380 ns VDD=10V, VGS=4.5V, ID=0.55A, RG=6Ω 3

CAD (KiCad official)

  • Symbol: WNM4153-3
  • Footprint: Package_TO_SOT_SMD:SOT-523
  • 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: wnm4153-3-etched.step / wnm4153-3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wnm4153-3.step / wnm4153-3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI Will Semicon datasheet (6 pp, sha256 0f4fcb910dc06e84, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF