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WNM3400-3

Public Made by Adom

by adom

WILLSEMI Will Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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WNM3400-3

WILLSEMI Will Semicon · MOSFETs · SOT-23

WNM3400-3 from WILLSEMI Will Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the gate-source voltage is rated at ±10 V maximum (VGS), and RDS(on) is specified at VGS of 2.5 V to 10 V.
2 S passive Source of the N-channel MOSFET; the maximum continuous drain current of 5.2 A (TA=25°C) is referenced to this terminal.
3 D passive Drain of the N-channel MOSFET; the drain-source voltage is rated at 30 V maximum (VDS) with a continuous drain current of 5.2 A at TA=25°C.

Key specifications

Parameter Value
Manufacturer WILLSEMI Will Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 2
Gate-Source Voltage VGS -10 10 V 2
Continuous Drain Current ID 5.2 A TA=25°C 2
Continuous Drain Current ID 4.6 A TA=70°C 2
Pulsed Drain Current IDM 30 A Note c: ~10us pulse width, duty cycle ~1% 2
Maximum Power Dissipation PD 1.67 W TA=25°C 2
Maximum Power Dissipation PD 1.07 W TA=70°C 2
Operating Junction Temperature TJ -55 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Junction-to-Ambient Thermal Resistance RθJA 60 75 °C/W t ≤ 10 s 2
Junction-to-Ambient Thermal Resistance RθJA 88 114 °C/W Steady State 2
Junction-to-Lead Thermal Resistance RθJL 39 49 °C/W Steady State 2
Drain-to-Source Breakdown Voltage BVDSS 30 V VGS = 0 V, ID = 250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS = 24V, VGS = 0V 3
Gate-to-source Leakage Current IGSS -100 100 nA VDS = 0 V, VGS = ±10V 3
Gate Threshold Voltage VGS(TH) 0.7 1 1.5 V VGS = VDS, ID = 250uA 3
Drain-to-source On-resistance RDS(on) 24 30 mΩ VGS = 10V, ID = 6.0A 3
Drain-to-source On-resistance RDS(on) 25 31 mΩ VGS = 4.5V, ID = 5.0A 3
Drain-to-source On-resistance RDS(on) 27 36 mΩ VGS = 3.1V, ID = 3.5A 3
Drain-to-source On-resistance RDS(on) 29 44 mΩ VGS = 2.5V, ID = 2.0A 3
Forward Voltage VSD 0.7 1.2 V VGS = 0 V, IS = 1.0A 3

CAD (KiCad official)

  • Symbol: WNM3400-3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: wnm3400-3-etched.step / wnm3400-3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wnm3400-3.step / wnm3400-3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI Will Semicon datasheet (8 pp, sha256 baa09bcc3c65d41c, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF