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WNM3019-3

Public Made by Adom

by adom

WILLSEMI Will Semicon MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WNM3019-3

WILLSEMI Will Semicon · MOSFETs · SOT-523

WNM3019-3 from WILLSEMI Will Semicon, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with VGS rated ±20V and a typical threshold of 1.0V (0.8V min, 1.5V max at ID=250uA).
2 S passive Source of the N-channel MOSFET, with the body diode running from source to drain and a forward voltage of 0.8V typical at IS=0.25A.
3 D passive Drain of the N-channel MOSFET, rated for VDS of 50V and continuous drain current of 0.25A (TA=25°C, 10 s).

Key specifications

Parameter Value
Manufacturer WILLSEMI Will Semicon
Package SOT-523
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 50 V 2
Gate-Source Voltage VGS -20 20 V printed ±20 2
Continuous Drain Current (a) ID 0.25 A TA=25°C, t ≤ 10 s, board a 2
Continuous Drain Current (a) ID 0.23 A TA=25°C, steady state, board a 2
Continuous Drain Current (a) ID 0.2 A TA=70°C, t ≤ 10 s, board a 2
Continuous Drain Current (a) ID 0.18 A TA=70°C, steady state, board a 2
Maximum Power Dissipation (a) PD 0.37 W TA=25°C, t ≤ 10 s, board a 2
Maximum Power Dissipation (a) PD 0.31 W TA=25°C, steady state, board a 2
Maximum Power Dissipation (a) PD 0.24 W TA=70°C, t ≤ 10 s, board a 2
Maximum Power Dissipation (a) PD 0.2 W TA=70°C, steady state, board a 2
Continuous Drain Current (b) ID 0.22 A TA=25°C, t ≤ 10 s, board b 2
Continuous Drain Current (b) ID 0.2 A TA=25°C, steady state, board b 2
Continuous Drain Current (b) ID 0.17 A TA=70°C, t ≤ 10 s, board b 2
Continuous Drain Current (b) ID 0.16 A TA=70°C, steady state, board b 2
Maximum Power Dissipation (b) PD 0.28 W TA=25°C, t ≤ 10 s, board b 2
Maximum Power Dissipation (b) PD 0.23 W TA=25°C, steady state, board b 2
Maximum Power Dissipation (b) PD 0.18 W TA=70°C, t ≤ 10 s, board b 2
Maximum Power Dissipation (b) PD 0.15 W TA=70°C, steady state, board b 2
Pulsed Drain Current IDM 1 A pulse width < 380 µs, duty cycle < 2% 2
Operating Junction Temperature TJ -55 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Ambient Thermal Resistance (a) RθJA 285 335 °C/W t ≤ 10 s, board a 2
Junction-to-Ambient Thermal Resistance (a) RθJA 340 405 °C/W steady state, board a 2
Junction-to-Ambient Thermal Resistance (b) RθJA 385 450 °C/W t ≤ 10 s, board b 2
Junction-to-Ambient Thermal Resistance (b) RθJA 455 545 °C/W steady state, board b 2
Junction-to-Case Thermal Resistance RθJC 260 300 °C/W steady state 2
Drain-to-Source Breakdown Voltage BVDSS 50 V VGS = 0 V, ID = 250 µA 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 40 V, VGS = 0 V 3
Gate-to-Source Leakage Current IGSS -5 5 µA VDS = 0 V, VGS = ±20 V 3
Gate Threshold Voltage VGS(TH) 0.8 1 1.5 V VGS = VDS, ID = 250 µA 3
Drain-to-Source On-resistance RDS(on) 1.2 3 Ω VGS = 10 V, ID = 0.45 A 3
Drain-to-Source On-resistance RDS(on) 1.3 4 Ω VGS = 4.5 V, ID = 0.25 A 3
Drain-to-Source On-resistance RDS(on) 1.4 4 Ω VGS = 4.0 V, ID = 0.25 A 3
Drain-to-Source On-resistance RDS(on) 1.9 6 Ω VGS = 2.5 V, ID = 0.01 A 3
Drain-to-Source On-resistance RDS(on) 5.4 15 Ω VGS = 1.8 V, ID = 0.01 A 3
Body Diode Forward Voltage VSD 0.8 1.5 V VGS = 0 V, IS = 0.25 A 3
Forward Transconductance gfs 0.5 S VDS = 15 V, ID = 0.1 A 3
Input Capacitance CISS 36 pF VGS = 0 V, F = 1.0 MHz, VDS = 5 V 3
Output Capacitance COSS 22 pF VGS = 0 V, F = 1.0 MHz, VDS = 5 V 3
Reverse Transfer Capacitance CRSS 12 pF VGS = 0 V, F = 1.0 MHz, VDS = 5 V 3
Total Gate Charge QG(TOT) 1.6 nC VGS = 10 V, VDD = 30 V, ID = 0.1 A 3
Threshold Gate Charge QG(TH) 0.25 nC VGS = 10 V, VDD = 30 V, ID = 0.1 A 3
Gate-to-Source Charge QGS 0.4 nC VGS = 10 V, VDD = 30 V, ID = 0.1 A 3
Gate-to-Drain Charge QGD 0.45 nC VGS = 10 V, VDD = 30 V, ID = 0.1 A 3
Turn-On Delay Time td(ON) 8.6 ns VGS = 5 V, VDD = 5 V, RL = 500 Ω, RG = 10 Ω, ID = 10 mA 3
Rise Time tr 4 ns VGS = 5 V, VDD = 5 V, RL = 500 Ω, RG = 10 Ω, ID = 10 mA 3
Turn-Off Delay Time td(OFF) 23.8 ns VGS = 5 V, VDD = 5 V, RL = 500 Ω, RG = 10 Ω, ID = 10 mA 3
Fall Time tf 14.2 ns VGS = 5 V, VDD = 5 V, RL = 500 Ω, RG = 10 Ω, ID = 10 mA 3

CAD (KiCad official)

  • Symbol: WNM3019-3
  • Footprint: Package_TO_SOT_SMD:SOT-523
  • 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: wnm3019-3-etched.step / wnm3019-3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wnm3019-3.step / wnm3019-3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI Will Semicon datasheet (8 pp, sha256 919c2bb9624ec725, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF