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WNM2020A-3

WILLSEMI(Will Semicon) · MOSFETs · SOT-23

WNM2020A-3 from WILLSEMI(Will Semicon), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±10 V absolute maximum, threshold 0.4 to 1.0 V at 250 uA, with 2000 V HBM ESD rating.
2 S passive Source terminal of the N-channel MOSFET, with body diode forward voltage 0.9 V typ and 1.1 V max at IS = 0.8 A.
3 D passive Drain; drain-source voltage 20 V max, continuous drain current 1.0 A at TA=25°C and 3.0 A pulsed.

Key specifications

Parameter Value
Manufacturer WILLSEMI(Will Semicon)
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 2
Gate-Source Voltage VGS -10 10 V 2
Continuous Drain Current ID 1 A TA=25°C 2
Continuous Drain Current ID 0.8 A TA=70°C 2
Pulsed Drain Current IDM 3 A 2
Power Dissipation PD 1 W TA=25°C 2
Power Dissipation PD 0.7 W TA=70°C 2
Operating Junction Temperature TJ -55 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Junction-to-Ambient Thermal Resistance (single operation, footnote a) RθJA 90 °C/W t ≤ 10 s 2
Junction-to-Ambient Thermal Resistance (single operation, footnote a) RθJA 122 °C/W Steady State 2
Junction-to-Ambient Thermal Resistance (single operation, footnote b) RθJA 141 °C/W t ≤ 10 s 2
Junction-to-Ambient Thermal Resistance (single operation, footnote b) RθJA 208 °C/W Steady State 2
Junction-to-Lead Thermal Resistance RθJL 52 °C/W Steady State 2
Drain-to-Source Breakdown Voltage BVDSS 20 V VGS = 0 V, ID = 250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS =16V, VGS = 0V 3
Gate-to-source Leakage Current IGSS -10 10 uA VDS = 0 V, VGS = ±10V 3
Gate Threshold Voltage VGS(TH) 0.4 0.7 1 V VGS = VDS, ID = 250uA 3
Drain-to-source On-resistance RDS(on) 387 580 mΩ VGS =4.5V, ID =0.8A 3
Drain-to-source On-resistance RDS(on) 432 710 mΩ VGS =3.1V, ID =0.6A 3
Drain-to-source On-resistance RDS(on) 472 900 mΩ VGS =2.5V, ID =0.3A 3
Drain-to-source On-resistance RDS(on) 616 1400 mΩ VGS =1.8V, ID =0.2A 3
Forward Voltage VSD 0.9 1.1 V VGS = 0 V, IS = 0.8A 3
Input Capacitance CISS 29 pF VGS = 0 V, f = 1.0MHz, VDS = 10 V 3
Output Capacitance COSS 11 pF 3
Reverse Transfer Capacitance CRSS 4 pF 3
Total Gate Charge QG(TOT) 1.1 nC VGS = 4.5 V, VDS = 10V, ID =0.55 A 3
Threshold Gate Charge QG(TH) 0.11 nC 3
Gate-to-Source Charge QGS 0.15 nC 3
Gate-to-Drain Charge QGD 0.32 nC 3
Gate Resistance Rg 6 Ω f=1MHz 3
Turn-On Delay Time td(ON) 5 ns VGS = 4.5 V, VDS = 10V, ID=0.55A , RG=6Ω 3
Rise Time tr 5.8 ns 3
Turn-Off Delay Time td(OFF) 15.4 ns 3
Fall Time tf 3.6 ns 3

CAD (KiCad official)

  • Symbol: WNM2020A-3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: wnm2020a-3-etched.step / wnm2020a-3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wnm2020a-3.step / wnm2020a-3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI(Will Semicon) datasheet (8 pp, sha256 005371650ad7dea5, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF