component
WNM2020A-3
Public Made by Adomby adom
WILLSEMI(Will Semicon) MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1d ago |
| viewers | 1d ago |
| package.json | 1d ago |
| page.json | 1d ago |
| README.md | 1d ago |
| verification.json | 1d ago |
| wnm2020a-3-etched.glb | 1d ago |
| wnm2020a-3-etched.step | 1d ago |
| wnm2020a-3-hero.glb | 1d ago |
| wnm2020a-3-hero.overlay.json | 1d ago |
| wnm2020a-3.glb | 1d ago |
| wnm2020a-3.kicad_mod | 1d ago |
| wnm2020a-3.kicad_sym | 1d ago |
| wnm2020a-3.lbr | 1d ago |
| wnm2020a-3.step | 1d ago |
WNM2020A-3
WILLSEMI(Will Semicon) · MOSFETs · SOT-23
WNM2020A-3 from WILLSEMI(Will Semicon), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±10 V absolute maximum, threshold 0.4 to 1.0 V at 250 uA, with 2000 V HBM ESD rating. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with body diode forward voltage 0.9 V typ and 1.1 V max at IS = 0.8 A. |
| 3 | D | passive | Drain; drain-source voltage 20 V max, continuous drain current 1.0 A at TA=25°C and 3.0 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI(Will Semicon) |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 2 | |||
| Gate-Source Voltage | VGS | -10 | 10 | V | 2 | ||
| Continuous Drain Current | ID | 1 | A | TA=25°C | 2 | ||
| Continuous Drain Current | ID | 0.8 | A | TA=70°C | 2 | ||
| Pulsed Drain Current | IDM | 3 | A | 2 | |||
| Power Dissipation | PD | 1 | W | TA=25°C | 2 | ||
| Power Dissipation | PD | 0.7 | W | TA=70°C | 2 | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance (single operation, footnote a) | RθJA | 90 | °C/W | t ≤ 10 s | 2 | ||
| Junction-to-Ambient Thermal Resistance (single operation, footnote a) | RθJA | 122 | °C/W | Steady State | 2 | ||
| Junction-to-Ambient Thermal Resistance (single operation, footnote b) | RθJA | 141 | °C/W | t ≤ 10 s | 2 | ||
| Junction-to-Ambient Thermal Resistance (single operation, footnote b) | RθJA | 208 | °C/W | Steady State | 2 | ||
| Junction-to-Lead Thermal Resistance | RθJL | 52 | °C/W | Steady State | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0 V, ID = 250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS =16V, VGS = 0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -10 | 10 | uA | VDS = 0 V, VGS = ±10V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 0.4 | 0.7 | 1 | V | VGS = VDS, ID = 250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 387 | 580 | mΩ | VGS =4.5V, ID =0.8A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 432 | 710 | mΩ | VGS =3.1V, ID =0.6A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 472 | 900 | mΩ | VGS =2.5V, ID =0.3A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 616 | 1400 | mΩ | VGS =1.8V, ID =0.2A | 3 | |
| Forward Voltage | VSD | 0.9 | 1.1 | V | VGS = 0 V, IS = 0.8A | 3 | |
| Input Capacitance | CISS | 29 | pF | VGS = 0 V, f = 1.0MHz, VDS = 10 V | 3 | ||
| Output Capacitance | COSS | 11 | pF | 3 | |||
| Reverse Transfer Capacitance | CRSS | 4 | pF | 3 | |||
| Total Gate Charge | QG(TOT) | 1.1 | nC | VGS = 4.5 V, VDS = 10V, ID =0.55 A | 3 | ||
| Threshold Gate Charge | QG(TH) | 0.11 | nC | 3 | |||
| Gate-to-Source Charge | QGS | 0.15 | nC | 3 | |||
| Gate-to-Drain Charge | QGD | 0.32 | nC | 3 | |||
| Gate Resistance | Rg | 6 | Ω | f=1MHz | 3 | ||
| Turn-On Delay Time | td(ON) | 5 | ns | VGS = 4.5 V, VDS = 10V, ID=0.55A , RG=6Ω | 3 | ||
| Rise Time | tr | 5.8 | ns | 3 | |||
| Turn-Off Delay Time | td(OFF) | 15.4 | ns | 3 | |||
| Fall Time | tf | 3.6 | ns | 3 |
CAD (KiCad official)
- Symbol:
WNM2020A-3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
wnm2020a-3-etched.step/wnm2020a-3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wnm2020a-3.step/wnm2020a-3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI(Will Semicon) datasheet (8 pp, sha256
005371650ad7dea5, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).