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WNM2016

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KUU MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WNM2016

KUU · MOSFETs · SOT-23

WNM2016 from KUU, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the N-channel MOSFET, rated for a gate-source voltage VGS of ±12 V.
2 SOURCE passive Source terminal of the N-channel MOSFET, with a continuous source-drain diode current IS rated at 1.3 A.
3 DRAIN passive Drain terminal of the N-channel MOSFET, rated for a drain-source voltage VDS of 20 V and a continuous drain current ID of 4.2 A.

Key specifications

Parameter Value
Manufacturer KUU
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 4.2 A 1
Pulsed Diode Current IDM 33 A 1
Power Dissipation PD 1.25 W 1
Operating Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 100 ℃/W t≤5s 1
Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID = 250µA 2
Gate-source threshold voltage VGS(th) 0.6 1.2 V VDS =VGS, ID = 250µA 2
Gate-source leakage IGSS -100 100 nA VDS =0V, VGS = ±12V 2
Zero gate voltage drain current IDSS -1 µA VDS = 16V, VGS =0V 2
Drain-source on-state resistance RDS(on) 35 45 mΩ VGS = 4.5V, ID = 4.2A 2
Drain-source on-state resistance RDS(on) 50 80 mΩ VGS = 2.5V, ID = 3.6A 2
Forward transconductance gfs 5.8 S VDS = 4.5V, ID = 4.2A 2
Diode forward voltage VSD -0.8 -1.2 V IS=1A, VGS=0V 2
Continuous Source-Drain Diode Current IS -1.3 A 2
Input capacitance Ciss 740 pF VDS = 15V,VGS =0V, f=1MHz 2
Output capacitance Coss 90 pF VDS = 15V,VGS =0V, f=1MHz 2
Reverse transfer capacitance Crss 66 pF VDS = 15V,VGS =0V, f=1MHz 2
Total gate charge Qg 8 nC VDS = 15V,VGS = 4.5V, ID = 4.2A 2
Gate-source charge Qgs 1.8 nC VDS = 15V,VGS = 4.5V, ID = 4.2A 2
Gate-drain charge Qgd 1.7 nC VDS = 15V,VGS = 4.5V, ID = 4.2A 2
Gate resistance Rg 6.5 Ω f=1MHz 2
Turn-on delay time td(on) 7.5 ns VDS= 10V, RL=6Ω, ID ≈ 1A, VGEN= 4.5V, Rg=3Ω 2
Rise time tr 10 ns VDS= 10V, RL=6Ω, ID ≈ 1A, VGEN= 4.5V, Rg=3Ω 2
Turn-off delay time td(off) 54 ns VDS= 10V, RL=6Ω, ID ≈ 1A, VGEN= 4.5V, Rg=3Ω 2
Fall time tf 26 ns VDS= 10V, RL=6Ω, ID ≈ 1A, VGEN= 4.5V, Rg=3Ω 2
Body Diode Reverse Recovery Time Trr 16 ns IF= 4.2A, dI/dt=100A/µs 2
Body Diode Reverse Recovery Charge Qrr 8.6 nC IF= 4.2A, dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: WNM2016
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: wnm2016-etched.step / wnm2016-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wnm2016.step / wnm2016.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KUU datasheet (3 pp, sha256 9e1075975505600f, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF