component
WMO26N65C4
Public Made by Adomby adom
Wayon MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
| wmo26n65c4-etched.glb | 8d ago |
| wmo26n65c4-etched.step | 8d ago |
| wmo26n65c4-hero.glb | 8d ago |
| wmo26n65c4-hero.overlay.json | 8d ago |
| wmo26n65c4.glb | 8d ago |
| wmo26n65c4.kicad_mod | 8d ago |
| wmo26n65c4.kicad_sym | 8d ago |
| wmo26n65c4.lbr | 8d ago |
| wmo26n65c4.step | 8d ago |
WMO26N65C4
Wayon · MOSFETs · TO-252-2
WMO26N65C4 from Wayon, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±30 V absolute maximum, with a gate threshold of 2 to 4 V typ. 3 V. |
| 2 | D | passive | Drain (center lead, trimmed, and the exposed mounting tab); drain-source voltage 650 V and continuous drain current 18 A at TC=25°C. |
| 3 | S | passive | Source; continuous body-diode forward current 18 A and pulsed 40 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wayon |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=0.25 mA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=0.25 mA | 2 |
| Drain cut-off current, Tj = 25°C | IDSS | 1 | μA | VDS=650 V, VGS=0 V, Tj=25°C | 2 | ||
| Drain cut-off current, Tj = 125°C | IDSS | 100 | μA | VDS=650 V, VGS=0 V, Tj=125°C | 2 | ||
| Gate leakage current, forward | IGSSF | 100 | nA | VGS=20 V, VDS=0 V | 2 | ||
| Gate leakage current, reverse | IGSSR | -100 | nA | VGS=-20 V, VDS=0 V | 2 | ||
| Static drain-source on-state resistance | RDS(on) | 0.16 | 0.19 | Ω | VGS=10 V, ID=6 A | 2 | |
| Continuous drain current, TC = 25°C | ID | 18 | A | TC=25°C | 1 | ||
| Continuous drain current, TC = 100°C | ID | 10.5 | A | TC=100°C | 1 | ||
| Drain-source voltage | VDS | 650 | V | 1 | |||
| Pulsed drain current | IDM | 40 | A | Pulse width limited by maximum junction temperature | 1 | ||
| Gate-source voltage | VGS | -30 | 30 | V | 1 | ||
| Avalanche energy, single pulse | EAS | 210 | mJ | IAS=2.5 A, VDD=50 V, RG=25 Ω, starting Tj=25°C | 1 | ||
| Avalanche energy, repetitive | EAR | 0.3 | mJ | Repetitive rating: pulse width limited by maximum junction temperature | 1 | ||
| Avalanche current, repetitive | IAR | 2.5 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 | ||
| Operating junction and storage temperature range | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Continuous diode forward current | IS | 18 | A | 1 | |||
| Diode pulse current | IS,pulse | 40 | A | 1 |
CAD (KiCad official)
- Symbol:
WMO26N65C4 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
wmo26n65c4-etched.step/wmo26n65c4-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wmo26n65c4.step/wmo26n65c4.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wayon datasheet (13 pp, sha256
938ebf0da1b4ac1a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).