component
WMO10N65C4
Public Made by Adomby adom
Wayon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
| wmo10n65c4-etched.glb | 8d ago |
| wmo10n65c4-etched.step | 8d ago |
| wmo10n65c4-hero.glb | 8d ago |
| wmo10n65c4-hero.overlay.json | 8d ago |
| wmo10n65c4.glb | 8d ago |
| wmo10n65c4.kicad_mod | 8d ago |
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| wmo10n65c4.lbr | 8d ago |
| wmo10n65c4.step | 8d ago |
WMO10N65C4
Wayon · MOSFETs · TO-252
WMO10N65C4 from Wayon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET; gate-source voltage is rated ±30 V per the absolute maximum ratings. |
| 2 | D | passive | Drain of the MOSFET; drain-source voltage is rated 650 V (700 V at Tj,max per the feature list) with RDS(on) of 0.52 Ω max at VGS = 10 V. |
| 3 | S | passive | Source of the MOSFET; body-diode forward voltage VSD is specified in the electrical characteristics (1.2 V max at VGS = 0 V, IF = 1.5 A per the table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wayon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Breakdown voltage, drain-source | BVDSS | 650 | V | VGS=0 V, ID=0.25 mA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=0.25 mA | 2 |
| Drain cut-off current | IDSS | 1 | μA | VDS=650 V, VGS=0 V, Tj=25°C | 2 | ||
| Gate leakage current, forward | IGSSF | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate leakage current, reverse | IGSSR | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.52 | 0.6 | Ω | VGS=10 V, ID=1.5A | 2 | |
| Diode forward voltage | VSD | 1.2 | V | VGS=0 V, IF=1.5A | 2 | ||
| Drain-source voltage | VDS | 650 | V | 1 | |||
| Continuous drain current | ID | 8 | A | TC = 25°C | 1 | ||
| Continuous drain current | ID | 4.8 | A | TC = 100°C | 1 | ||
| Pulsed drain current | IDM | 19 | A | 1 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 1 | ||
| Avalanche energy, single pulse | EAS | 45 | mJ | 1 | |||
| Avalanche energy, repetitive | EAR | 0.15 | mJ | 1 | |||
| Avalanche current, repetitive | IAR | 1 | A | 1 | |||
| Power dissipation | PD | 57 | W | TC = 25°C | 1 | ||
| Derating above 25°C | 0.46 | W/°C | Derate above 25°C | 1 | |||
| Operating junction and storage temperature range | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Diode continuous forward current | IS | 8 | A | 1 | |||
| Diode pulse current | IS,pulse | 19 | A | 1 | |||
| Thermal resistance, junction-to-case | RθJC | 2.2 | °C/W | 1 | |||
| Thermal resistance, junction-to-ambient | RθJA | 62 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
WMO10N65C4 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wmo10n65c4-etched.step/wmo10n65c4-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wmo10n65c4.step/wmo10n65c4.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wayon datasheet (13 pp, sha256
846a76d6f345c7bd, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).