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WMO07N65C4

Public Made by Adom

by adom

Wayon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WMO07N65C4

Wayon · MOSFETs · TO-252

WMO07N65C4 from Wayon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±30 V absolute maximum, threshold 2 V min to 4 V max at VDS=VGS, ID=0.25 mA.
2 D passive Drain (center position and exposed tab); drain-source voltage 650 V max, continuous drain current 5 A at TC=25°C.
3 S passive Source; continuous body-diode forward current 5 A, pulsed 9 A.

Key specifications

Parameter Value
Manufacturer Wayon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 650 V VGS=0 V, ID=0.25 mA 2
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS, ID=0.25 mA 2
Gate leakage current, forward IGSSF 100 nA VGS=20V, VDS=0V 2
Gate leakage current, reverse IGSSR -100 nA VGS=-20V, VDS=0V 2
Drain-source on-state resistance, Tj=25°C RDS(on) 0.96 1.14 Ω VGS=10 V, ID=1A, Tj=25°C 2
Diode forward voltage VSD 1.2 V VGS=0 V, IF=1A 2
Drain-source voltage VDS 650 V 1
Continuous drain current, TC=25°C ID 5 A TC=25°C 1
Continuous drain current, TC=100°C ID 2.8 A TC=100°C 1
Pulsed drain current IDM 9 A 1
Gate-source voltage VGS -30 30 V 1
Single pulse avalanche energy EAS 15 mJ 1
Repetitive avalanche energy EAR 0.1 mJ 1
Repetitive avalanche current IAR 0.7 A 1
Power dissipation, TC=25°C PD 42 W TC=25°C 1
Derating above 25°C 0.34 W/°C above 25°C 1
Operating junction and storage temperature range Tj, Tstg -55 150 °C 1
Continuous diode forward current IS 5 A 1
Diode pulse current IS,pulse 9 A 1
Thermal resistance, junction-to-case RθJC 3 °C/W 1
Thermal resistance, junction-to-ambient RθJA 62 °C/W 1

CAD (KiCad official)

  • Symbol: WMO07N65C4
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wmo07n65c4-etched.step / wmo07n65c4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wmo07n65c4.step / wmo07n65c4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wayon datasheet (13 pp, sha256 66afa31c0eb28696, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF