component
WM02P23M
Public Made by Adomby adom
Wayon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WM02P23M
Wayon · MOSFETs · SOT-23
WM02P23M from Wayon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±10 V, with a threshold of -0.4 V to -1.2 V at ID = -250 µA. |
| 2 | S | passive | Source; P-channel MOSFET source terminal carrying up to -2.3 A continuous drain current at TA=25°C. |
| 3 | D | passive | Drain; drain-source voltage is rated to -20 V, with -2.3 A continuous and -8 A pulsed drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wayon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS= 0V, ID= -250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS= -20V, VGS= 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS= 0V, VGS= ±10V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -0.4 | -1.2 | V | VDS= VGS, ID= -250μA | 2 | |
| Drain-Source on-State Resistance | RDS(on) | 90 | 115 | mΩ | VGS= -4.5V ,ID= -1.5A | 2 | |
| Drain-Source on-State Resistance | RDS(on) | 115 | 145 | mΩ | VGS= -2.5V, ID= -1.5A | 2 | |
| Drain-Source on-State Resistance | RDS(on) | 155 | 250 | mΩ | VGS= -1.8V, ID= -1.5A | 2 | |
| Body Diode Voltage | VSD | -1.2 | V | IS= -2A, VGS= 0V | 2 | ||
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -10 | 10 | V | 1 | ||
| Continuous Drain Current | ID | -2.3 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -1.6 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -8 | A | 1 | |||
| Power Dissipation | PD | 0.7 | W | 1 | |||
| Operating Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 178 | °C/W | Surface mounted on FR4 board using 1 square inch pad size,1oz single-side copper | 1 | ||
| Input Capacitance | Ciss | 270 | pF | VGS= 0V ,VDS = -10V, f= 1MHz | 2 | ||
| Output Capacitance | Coss | 37 | pF | VGS= 0V ,VDS = -10V, f= 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 29 | pF | VGS= 0V ,VDS = -10V, f= 1MHz | 2 | ||
| Total gate charge | Qg | 3.9 | nC | VGS= -4.5V ,VDS= -10V , ID= -2A | 2 | ||
| Gate-source charge | Qgs | 0.7 | nC | VGS= -4.5V ,VDS= -10V , ID= -2A | 2 | ||
| Gate-drain charge | Qgd | 0.9 | nC | VGS= -4.5V ,VDS= -10V , ID= -2A | 2 | ||
| Turn-on Time | td(on) | 12 | nS | VGS= -4.5V ,VDD= -10V, RL = 5Ω, RGEN= 3Ω | 2 | ||
| Rise Time | tr | 10 | nS | VGS= -4.5V ,VDD= -10V, RL = 5Ω, RGEN= 3Ω | 2 | ||
| Turn-off Time | td(off) | 15 | nS | VGS= -4.5V ,VDD= -10V, RL = 5Ω, RGEN= 3Ω | 2 | ||
| Fall Time | tf | 9 | nS | VGS= -4.5V ,VDD= -10V, RL = 5Ω, RGEN= 3Ω | 2 |
CAD (KiCad official)
- Symbol:
WM02P23M - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
wm02p23m-etched.step/wm02p23m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wm02p23m.step/wm02p23m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wayon datasheet (4 pp, sha256
e57b3d8b94d6bc65, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WM02P23M
**Wayon** · MOSFETs · SOT-23
WM02P23M from Wayon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±10 V, with a threshold of -0.4 V to -1.2 V at ID = -250 µA. |
| 2 | S | passive | Source; P-channel MOSFET source terminal carrying up to -2.3 A continuous drain current at TA=25°C. |
| 3 | D | passive | Drain; drain-source voltage is rated to -20 V, with -2.3 A continuous and -8 A pulsed drain current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wayon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | | | V | VGS= 0V, ID= -250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS= -20V, VGS= 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS= 0V, VGS= ±10V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -0.4 | | -1.2 | V | VDS= VGS, ID= -250μA | 2 |
| Drain-Source on-State Resistance | RDS(on) | | 90 | 115 | mΩ | VGS= -4.5V ,ID= -1.5A | 2 |
| Drain-Source on-State Resistance | RDS(on) | | 115 | 145 | mΩ | VGS= -2.5V, ID= -1.5A | 2 |
| Drain-Source on-State Resistance | RDS(on) | | 155 | 250 | mΩ | VGS= -1.8V, ID= -1.5A | 2 |
| Body Diode Voltage | VSD | | | -1.2 | V | IS= -2A, VGS= 0V | 2 |
| Drain-Source Voltage | VDS | | | -20 | V | | 1 |
| Gate-Source Voltage | VGS | -10 | | 10 | V | | 1 |
| Continuous Drain Current | ID | | | -2.3 | A | TA=25°C | 1 |
| Continuous Drain Current | ID | | | -1.6 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | -8 | A | | 1 |
| Power Dissipation | PD | | | 0.7 | W | | 1 |
| Operating Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance Junction to Ambient | RθJA | | | 178 | °C/W | Surface mounted on FR4 board using 1 square inch pad size,1oz single-side copper | 1 |
| Input Capacitance | Ciss | | 270 | | pF | VGS= 0V ,VDS = -10V, f= 1MHz | 2 |
| Output Capacitance | Coss | | 37 | | pF | VGS= 0V ,VDS = -10V, f= 1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 29 | | pF | VGS= 0V ,VDS = -10V, f= 1MHz | 2 |
| Total gate charge | Qg | | 3.9 | | nC | VGS= -4.5V ,VDS= -10V , ID= -2A | 2 |
| Gate-source charge | Qgs | | 0.7 | | nC | VGS= -4.5V ,VDS= -10V , ID= -2A | 2 |
| Gate-drain charge | Qgd | | 0.9 | | nC | VGS= -4.5V ,VDS= -10V , ID= -2A | 2 |
| Turn-on Time | td(on) | | 12 | | nS | VGS= -4.5V ,VDD= -10V, RL = 5Ω, RGEN= 3Ω | 2 |
| Rise Time | tr | | 10 | | nS | VGS= -4.5V ,VDD= -10V, RL = 5Ω, RGEN= 3Ω | 2 |
| Turn-off Time | td(off) | | 15 | | nS | VGS= -4.5V ,VDD= -10V, RL = 5Ω, RGEN= 3Ω | 2 |
| Fall Time | tf | | 9 | | nS | VGS= -4.5V ,VDD= -10V, RL = 5Ω, RGEN= 3Ω | 2 |
## CAD (KiCad official)
- Symbol: `WM02P23M`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `wm02p23m-etched.step` / `wm02p23m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wm02p23m.step` / `wm02p23m.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wayon datasheet](docs/wm02p23m-datasheet.pdf) (4 pp, sha256 `e57b3d8b94d6bc65`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wm02p23m-datasheet.pdf)