component

WM02N50M

Public Made by Adom

by adom

Wayon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 16d ago
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package.json Publish 0.1.0 · Ray 16d ago
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README.md Publish 0.1.0 · Ray 16d ago
wm02n50m-etched.glb Publish 0.1.0 · Ray 16d ago
wm02n50m-etched.step wm02n50m: factory component page (tier=lcsc) · Ray 16d ago
wm02n50m-hero.glb wm02n50m: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
wm02n50m-hero.overlay.json Publish 0.1.0 · Ray 16d ago
wm02n50m.glb Publish 0.1.0 · Ray 16d ago
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WM02N50M

Wayon · MOSFETs · SOT-23

WM02N50M from Wayon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±12 V maximum and a threshold of 0.45 V min to 1 V max at 250 µA.
2 S passive Source; main current terminal of the N-channel MOSFET, with continuous current IS of 5 A maximum through the body diode.
3 D passive Drain; rated for VDS of 20 V and continuous drain current of 5 A (20 A pulsed) at TA=25°C.

Key specifications

Parameter Value
Manufacturer Wayon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0 V, ID = 250µA 2
Gate Leakage Current IGSS -100 100 nA VGS = ±12V, VDS = 0 V 2
Drain Cut-off Current IDSS 1 µA VDS = 20V, VGS = 0 V 2
Gate Threshold Voltage VGS(th) 0.45 0.7 1 V VGS = VDS, ID = 250µA 2
Drain-Source On-State Resistance RDS(on) 16 24 mΩ VGS = 4.5V, ID = 5A 2
Drain-Source On-State Resistance RDS(on) 21 35 mΩ VGS = 2.5V, ID = 4.7A 2
Drain-Source On-State Resistance RDS(on) 32 57 mΩ VGS = 1.8V, ID = 4.3A 2
Body Diode Voltage VSD 1.2 V IS = 4A, VGS = 0V 2
Continuous Source Current IS 5 A 2
Drain-Source Voltage VDS 20 V TJ = 25°C unless otherwise noted 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 5 A TA = 25°C 1
Pulsed Drain Current IDM 20 A Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C 1
Power Dissipation PD 1.25 W TA = 25°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance from Junction to Ambient RθJA 100 °C/W Surface mounted on 1 inch² FR-4 board with 2OZ copper (note 2) 1

CAD (KiCad official)

  • Symbol: WM02N50M
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: wm02n50m-etched.step / wm02n50m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wm02n50m.step / wm02n50m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wayon datasheet (5 pp, sha256 ea23ec4df27ee040, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF