WM02N31M

Wayon · MOSFETs · SOT-23

WM02N31M from Wayon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; controls the channel, with VGS rated ±8 V absolute maximum and threshold VGS(th) 0.4 to 1.2 V at ID = 250µA.
2	S	passive	Source; body diode anode side, continuous source current IS up to 3.1 A.
3	D	passive	Drain; VDS rated 20 V maximum, continuous drain current ID = 3.1 A at TA = 25°C (pulsed IDM 12.4 A).

Key specifications

Parameter	Value
Manufacturer	Wayon
Package	SOT-23
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Breakdown Voltage	V(BR)DSS	20			V	VGS = 0 V, ID = 250µA	2
Drain Cut-off Current	IDSS			1	µA	VDS = 20V, VGS = 0 V	2
Gate Leakage Current	IGSS	-100		100	nA	VGS = ±8V, VDS = 0 V	2
Gate Threshold Voltage	VGS(th)	0.4	0.75	1.2	V	VGS = VDS, ID = 250µA	2
Drain-Source on-State Resistance	RDS(on)		33	45	mΩ	VGS = 4.5V, ID = 3.1A	2
Drain-Source on-State Resistance	RDS(on)		43	60	mΩ	VGS = 2.5V, ID = 2.5A	2
Body Diode Voltage	VSD			1.2	V	IS = 1A, VGS = 0V	2
Continuous Source Current	IS			3.1	A		2
Drain-Source Voltage	VDS			20	V		1
Gate-Source Voltage	VGS	-8		8	V		1
Continuous Drain Current	ID			3.1	A	TA = 25°C	1
Pulsed Drain Current	IDM			12.4	A	Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C (note 1)	1
Power Dissipation	PD			700	mW	TA = 25°C	1
Operating Junction and Storage Temperature Range	TJ, TSTG	-55		150	°C		1
Thermal Resistance from Junction to Ambient	RθJA			179	°C/W	Note 2: surface mounted on 1 inch² FR-4 board with 2OZ copper	1

CAD (KiCad official)

Symbol: WM02N31M
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23 (KiCad packages3D, STEP)
3D model files: wm02n31m-etched.step / wm02n31m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wm02n31m.step / wm02n31m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Wayon datasheet (5 pp, sha256 75396c9f9869d18a, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

# WM02N31M

**Wayon** · MOSFETs · SOT-23

WM02N31M from Wayon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±8 V absolute maximum and threshold VGS(th) 0.4 to 1.2 V at ID = 250µA. |
| 2 | S | passive | Source; body diode anode side, continuous source current IS up to 3.1 A. |
| 3 | D | passive | Drain; VDS rated 20 V maximum, continuous drain current ID = 3.1 A at TA = 25°C (pulsed IDM 12.4 A). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wayon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 |  |  | V | VGS = 0 V, ID = 250µA | 2 |
| Drain Cut-off Current | IDSS |  |  | 1 | µA | VDS = 20V, VGS = 0 V | 2 |
| Gate Leakage Current | IGSS | -100 |  | 100 | nA | VGS = ±8V, VDS = 0 V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.75 | 1.2 | V | VGS = VDS, ID = 250µA | 2 |
| Drain-Source on-State Resistance | RDS(on) |  | 33 | 45 | mΩ | VGS = 4.5V, ID = 3.1A | 2 |
| Drain-Source on-State Resistance | RDS(on) |  | 43 | 60 | mΩ | VGS = 2.5V, ID = 2.5A | 2 |
| Body Diode Voltage | VSD |  |  | 1.2 | V | IS = 1A, VGS = 0V | 2 |
| Continuous Source Current | IS |  |  | 3.1 | A |  | 2 |
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -8 |  | 8 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 3.1 | A | TA = 25°C | 1 |
| Pulsed Drain Current | IDM |  |  | 12.4 | A | Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C (note 1) | 1 |
| Power Dissipation | PD |  |  | 700 | mW | TA = 25°C | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance from Junction to Ambient | RθJA |  |  | 179 | °C/W | Note 2: surface mounted on 1 inch² FR-4 board with 2OZ copper | 1 |

## CAD (KiCad official)

- Symbol: `WM02N31M`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `wm02n31m-etched.step` / `wm02n31m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wm02n31m.step` / `wm02n31m.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wayon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590908905298219008) (5 pp, sha256 `75396c9f9869d18a`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wm02n31m-datasheet.pdf)