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Ray Publish 0.1.0 da1e967 18d ago

WM02N28M

Wayon · MOSFETs · SOT-23

WM02N28M from Wayon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±10 V absolute maximum, with VGS(th) of 0.4 V min to 1.2 V max at ID = 250 µA.
2 S passive Source; body diode forward voltage VSD is 1.2 V max at IS = 1 A, VGS = 0 V.
3 D passive Drain; drain-source voltage limited to 20 V, with continuous drain current of 2.8 A at TA = 25°C and 10 A pulsed.

Key specifications

Parameter Value
Manufacturer Wayon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -10 10 V 1
Continuous Drain Current ID 2.8 A TA = 25°C 1
Continuous Drain Current ID 2.2 A TA = 100°C 1
Pulsed Drain Current IDM 10 A 1
Power Dissipation PD 0.7 W 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Thermal Resistance from Junction to Ambient RθJA 178 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS = 0 V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±10V, VDS = 0V 2
Gate-Source Threshold Voltage VGS(th) 0.4 0.85 1.2 V VGS = VDS, ID = 250µA 2
Drain-Source on-State Resistance RDS(on) 40 60 mΩ VGS = 4.5V, ID = 2.8A 2
Drain-Source on-State Resistance RDS(on) 55 100 mΩ VGS = 2.5V, ID = 2.0A 2
Body Diode Voltage VSD 1.2 V IS = 1A, VGS = 0V 2
Input Capacitance Ciss 220 pF VGS = 0V, VDS = 10V, f = 1 MHz 2
Output Capacitance Coss 37 pF VGS = 0V, VDS = 10V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 30 pF VGS = 0V, VDS = 10V, f = 1 MHz 2
Total gate charge Qg 2.6 nC VGS= 4.5V, VDS= 10V, ID= 2.5A 2
Gate-source charge Qgs 0.5 nC VGS= 4.5V, VDS= 10V, ID= 2.5A 2
Gate-drain charge Qgd 0.7 nC VGS= 4.5V, VDS= 10V, ID= 2.5A 2
Turn-on Time td(on) 12.5 nS VGS = 4.5V, VDD = 10V, RL = 1.5Ω, RGEN = 3Ω 2
Rise Time tf 9.8 nS VGS = 4.5V, VDD = 10V, RL = 1.5Ω, RGEN = 3Ω 2
Turn-off Time td(off) 17.5 nS VGS = 4.5V, VDD = 10V, RL = 1.5Ω, RGEN = 3Ω 2
Fall Time tf 5 nS VGS = 4.5V, VDD = 10V, RL = 1.5Ω, RGEN = 3Ω 2

CAD (KiCad official)

  • Symbol: WM02N28M
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: wm02n28m-etched.step / wm02n28m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wm02n28m.step / wm02n28m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wayon datasheet (4 pp, sha256 bd2c71dc5ca02d95, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF