component
WM02N28M
Public Made by Adomby adom
Wayon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WM02N28M
Wayon · MOSFETs · SOT-23
WM02N28M from Wayon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±10 V absolute maximum, with VGS(th) of 0.4 V min to 1.2 V max at ID = 250 µA. |
| 2 | S | passive | Source; body diode forward voltage VSD is 1.2 V max at IS = 1 A, VGS = 0 V. |
| 3 | D | passive | Drain; drain-source voltage limited to 20 V, with continuous drain current of 2.8 A at TA = 25°C and 10 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wayon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -10 | 10 | V | 1 | ||
| Continuous Drain Current | ID | 2.8 | A | TA = 25°C | 1 | ||
| Continuous Drain Current | ID | 2.2 | A | TA = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 10 | A | 1 | |||
| Power Dissipation | PD | 0.7 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 178 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS = 0 V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±10V, VDS = 0V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 0.4 | 0.85 | 1.2 | V | VGS = VDS, ID = 250µA | 2 |
| Drain-Source on-State Resistance | RDS(on) | 40 | 60 | mΩ | VGS = 4.5V, ID = 2.8A | 2 | |
| Drain-Source on-State Resistance | RDS(on) | 55 | 100 | mΩ | VGS = 2.5V, ID = 2.0A | 2 | |
| Body Diode Voltage | VSD | 1.2 | V | IS = 1A, VGS = 0V | 2 | ||
| Input Capacitance | Ciss | 220 | pF | VGS = 0V, VDS = 10V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 37 | pF | VGS = 0V, VDS = 10V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 30 | pF | VGS = 0V, VDS = 10V, f = 1 MHz | 2 | ||
| Total gate charge | Qg | 2.6 | nC | VGS= 4.5V, VDS= 10V, ID= 2.5A | 2 | ||
| Gate-source charge | Qgs | 0.5 | nC | VGS= 4.5V, VDS= 10V, ID= 2.5A | 2 | ||
| Gate-drain charge | Qgd | 0.7 | nC | VGS= 4.5V, VDS= 10V, ID= 2.5A | 2 | ||
| Turn-on Time | td(on) | 12.5 | nS | VGS = 4.5V, VDD = 10V, RL = 1.5Ω, RGEN = 3Ω | 2 | ||
| Rise Time | tf | 9.8 | nS | VGS = 4.5V, VDD = 10V, RL = 1.5Ω, RGEN = 3Ω | 2 | ||
| Turn-off Time | td(off) | 17.5 | nS | VGS = 4.5V, VDD = 10V, RL = 1.5Ω, RGEN = 3Ω | 2 | ||
| Fall Time | tf | 5 | nS | VGS = 4.5V, VDD = 10V, RL = 1.5Ω, RGEN = 3Ω | 2 |
CAD (KiCad official)
- Symbol:
WM02N28M - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
wm02n28m-etched.step/wm02n28m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wm02n28m.step/wm02n28m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wayon datasheet (4 pp, sha256
bd2c71dc5ca02d95, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WM02N28M
**Wayon** · MOSFETs · SOT-23
WM02N28M from Wayon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±10 V absolute maximum, with VGS(th) of 0.4 V min to 1.2 V max at ID = 250 µA. |
| 2 | S | passive | Source; body diode forward voltage VSD is 1.2 V max at IS = 1 A, VGS = 0 V. |
| 3 | D | passive | Drain; drain-source voltage limited to 20 V, with continuous drain current of 2.8 A at TA = 25°C and 10 A pulsed. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wayon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 20 | V | | 1 |
| Gate-Source Voltage | VGS | -10 | | 10 | V | | 1 |
| Continuous Drain Current | ID | | | 2.8 | A | TA = 25°C | 1 |
| Continuous Drain Current | ID | | | 2.2 | A | TA = 100°C | 1 |
| Pulsed Drain Current | IDM | | | 10 | A | | 1 |
| Power Dissipation | PD | | | 0.7 | W | | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 178 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | | | V | VGS = 0 V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 20V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±10V, VDS = 0V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 0.4 | 0.85 | 1.2 | V | VGS = VDS, ID = 250µA | 2 |
| Drain-Source on-State Resistance | RDS(on) | | 40 | 60 | mΩ | VGS = 4.5V, ID = 2.8A | 2 |
| Drain-Source on-State Resistance | RDS(on) | | 55 | 100 | mΩ | VGS = 2.5V, ID = 2.0A | 2 |
| Body Diode Voltage | VSD | | | 1.2 | V | IS = 1A, VGS = 0V | 2 |
| Input Capacitance | Ciss | | 220 | | pF | VGS = 0V, VDS = 10V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 37 | | pF | VGS = 0V, VDS = 10V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 30 | | pF | VGS = 0V, VDS = 10V, f = 1 MHz | 2 |
| Total gate charge | Qg | | 2.6 | | nC | VGS= 4.5V, VDS= 10V, ID= 2.5A | 2 |
| Gate-source charge | Qgs | | 0.5 | | nC | VGS= 4.5V, VDS= 10V, ID= 2.5A | 2 |
| Gate-drain charge | Qgd | | 0.7 | | nC | VGS= 4.5V, VDS= 10V, ID= 2.5A | 2 |
| Turn-on Time | td(on) | | 12.5 | | nS | VGS = 4.5V, VDD = 10V, RL = 1.5Ω, RGEN = 3Ω | 2 |
| Rise Time | tf | | 9.8 | | nS | VGS = 4.5V, VDD = 10V, RL = 1.5Ω, RGEN = 3Ω | 2 |
| Turn-off Time | td(off) | | 17.5 | | nS | VGS = 4.5V, VDD = 10V, RL = 1.5Ω, RGEN = 3Ω | 2 |
| Fall Time | tf | | 5 | | nS | VGS = 4.5V, VDD = 10V, RL = 1.5Ω, RGEN = 3Ω | 2 |
## CAD (KiCad official)
- Symbol: `WM02N28M`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `wm02n28m-etched.step` / `wm02n28m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wm02n28m.step` / `wm02n28m.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wayon datasheet](docs/wm02n28m-datasheet.pdf) (4 pp, sha256 `bd2c71dc5ca02d95`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wm02n28m-datasheet.pdf)