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WGU5N65SE

Public Made by Adom

by adom

Wild Goose MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WGU5N65SE

Wild Goose · MOSFETs · TO-251

WGU5N65SE from Wild Goose, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET; the datasheet gives a gate threshold of 2 to 4 V at ID=250 μA and gate-body leakage tested at VGS=±30 V.
2 Drain passive Drain terminal of the MOSFET; rated for BVDSS of 650 V and drain current of 5.0 A at Tj=25℃, with RDS(on) of 2.50 Ω max at VGS=10 V.
3 Source passive Source terminal of the MOSFET, the reference for the gate and drain ratings; maximum diode forward current is 4 A and maximum pulsed forward current is 16 A.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-251
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Drain Current ID 5 A Tj=25℃ 1
Drain Current ID 2.7 A Tj=100℃ 1
Gate Threshold Voltage (as printed) VGS (TH) 30 V 1
Single Pulse Avalanche Energy EAS 120 mJ note1 1
Avalanche Current IAR 5 A note2 1
Power Dissipation PD 50 W Tj=25 ℃ 1
Junction Temperature Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering TL 300 ℃ 1/8' from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 2.4 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 650 V ID=250 μA，VGS=0 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=650V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS =520V, Tj=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA VGS =+30V, VDS=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA VGS =-30V,VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V ID=250μA,VDS=VGS 2
Static Drain-Source On-Resistance RDS(ON) 2.5 Ω ID=2.0A,VGS =10V 2
Max. Diode Forward Current Is 4 A 2
Max. Pulsed Forward Current ISM 16 A 2
Diode Forward Voltage VSD 1.4 V ID=5A 2
Breakdown Voltage Temperature Coefficient △BVDSS/ △TJ 0.67 V/ ℃ ID=250 μA ,Reference to 25℃ 2
Input Capacitance Ciss 560 pF VDS=25V，VGS=0，f=1.0MHz 2
Output Capacitance Coss 48 pF VDS=25V，VGS=0，f=1.0MHz 2
Reverse Transfer Capacitance Crss 5.4 pF VDS=25V，VGS=0，f=1.0MHz 2
Turn-On Delay Time Td(on) 25 nS VDD=325V，ID=5A, RG =25Ω 2
Turn-On Rise Time Tr 45 nS VDD=325V，ID=5A, RG =25Ω 2
Turn-Off Delay Time Td(off) 25 nS VDD=325V，ID=5A, RG =25Ω 2
Turn-Off Rise Time Tf 35 nS VDD=325V，ID=5A, RG =25Ω 2
Gate-Source Charge Qgs 2.8 nC VDS=520V,VGS =10V，ID=5A 2
Gate-Drain Charge Qgd 4.5 nC VDS=520V,VGS =10V，ID=5A 2
Reverse Recovery Time Trr 393 nS IS=5A,VGS =0V diF/dt=100A/μs 2
Reverse Recovery Charge Qrr 1.5 μC IS=5A,VGS =0V diF/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: WGU5N65SE
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: wgu5n65se-etched.step / wgu5n65se-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgu5n65se.step / wgu5n65se.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (7 pp, sha256 1d1c3a6d514d0602, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF