component
WGU5N60SE
Public Made by Adomby adom
Wild Goose MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WGU5N60SE
Wild Goose · MOSFETs · TO-251
WGU5N60SE from Wild Goose, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate (G) | input | Gate-source voltage is rated ±30 V (VGSS), with a gate-body leakage limit of 100 nA at VGS=±30 V. |
| 2 | Drain (D) | passive | Drain-source voltage is rated 600 V (VDSS) and drain current is rated 5 A at Tj=25℃ (3.0 A at Tj=100℃). |
| 3 | Source (S) | passive | Source terminal; the body diode is rated for a maximum forward current of 5 A and a maximum pulsed current of 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-251 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 600 | V | 1 | |||
| Drain Current | ID | 5 | A | Tj=25℃ | 1 | ||
| Drain Current | ID | 3 | A | Tj=100℃ | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 128 | mJ | note1 | 1 | ||
| Avalanche Current | IAR | 5 | A | note2 | 1 | ||
| Power Dissipation | PD | 50 | W | Tj=25℃ | 1 | ||
| Junction Temperature | Tj | 150 | ℃ | Max | 1 | ||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | ℃ | 1/8 inch from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 2.5 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | ID=250μA, VGS=0 | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=600V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS=480V, Tj=125℃ | 2 | ||
| Gate-body leakage Current, Forward | IGSSF | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-body leakage Current, Reverse | IGSSR | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | ID=250μA, VDS=VGS | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.3 | Ω | ID=2A, VGS=10V | 2 | ||
| Turn-On Delay Time | Td(on) | 35 | ns | VDD=300V, ID=4A, RG=25Ω (Note 3,4) | 2 | ||
| Turn-On Rise Time | Tr | 100 | ns | VDD=300V, ID=4A, RG=25Ω (Note 3,4) | 2 | ||
| Turn-Off Delay Time | Td(off) | 60 | ns | VDD=300V, ID=4A, RG=25Ω (Note 3,4) | 2 | ||
| Turn-Off Rise Time | Tf | 80 | ns | VDD=300V, ID=4A, RG=25Ω (Note 3,4) | 2 | ||
| Max. Diode Forward Current | Is | 5 | A | 2 | |||
| Max. Pulsed Forward Current | ISM | 20 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.4 | V | ID=4A | 2 | ||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | 0.6 | V/℃ | ID=250μA, Reference to 25℃ | 2 |
CAD (KiCad official)
- Symbol:
WGU5N60SE - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
wgu5n60se-etched.step/wgu5n60se-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wgu5n60se.step/wgu5n60se.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (8 pp, sha256
f9f6d003c3c487e7, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WGU5N60SE
**Wild Goose** · MOSFETs · TO-251
WGU5N60SE from Wild Goose, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate (G) | input | Gate-source voltage is rated ±30 V (VGSS), with a gate-body leakage limit of 100 nA at VGS=±30 V. |
| 2 | Drain (D) | passive | Drain-source voltage is rated 600 V (VDSS) and drain current is rated 5 A at Tj=25℃ (3.0 A at Tj=100℃). |
| 3 | Source (S) | passive | Source terminal; the body diode is rated for a maximum forward current of 5 A and a maximum pulsed current of 20 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-251 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 600 | V | | 1 |
| Drain Current | ID | | | 5 | A | Tj=25℃ | 1 |
| Drain Current | ID | | | 3 | A | Tj=100℃ | 1 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 128 | mJ | note1 | 1 |
| Avalanche Current | IAR | | | 5 | A | note2 | 1 |
| Power Dissipation | PD | | | 50 | W | Tj=25℃ | 1 |
| Junction Temperature | Tj | | | 150 | ℃ | Max | 1 |
| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Maximum lead temperature for soldering | TL | | | 300 | ℃ | 1/8 inch from case for 5 seconds | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 2.5 | ℃/W | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 62.5 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 600 | | | V | ID=250μA, VGS=0 | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | μA | VDS=600V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 100 | μA | VDS=480V, Tj=125℃ | 2 |
| Gate-body leakage Current, Forward | IGSSF | | | 100 | nA | VGS=+30V, VDS=0V | 2 |
| Gate-body leakage Current, Reverse | IGSSR | | | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | ID=250μA, VDS=VGS | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 2.3 | Ω | ID=2A, VGS=10V | 2 |
| Turn-On Delay Time | Td(on) | | | 35 | ns | VDD=300V, ID=4A, RG=25Ω (Note 3,4) | 2 |
| Turn-On Rise Time | Tr | | | 100 | ns | VDD=300V, ID=4A, RG=25Ω (Note 3,4) | 2 |
| Turn-Off Delay Time | Td(off) | | | 60 | ns | VDD=300V, ID=4A, RG=25Ω (Note 3,4) | 2 |
| Turn-Off Rise Time | Tf | | | 80 | ns | VDD=300V, ID=4A, RG=25Ω (Note 3,4) | 2 |
| Max. Diode Forward Current | Is | | | 5 | A | | 2 |
| Max. Pulsed Forward Current | ISM | | | 20 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.4 | V | ID=4A | 2 |
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | | 0.6 | | V/℃ | ID=250μA, Reference to 25℃ | 2 |
## CAD (KiCad official)
- Symbol: `WGU5N60SE`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files: `wgu5n60se-etched.step` / `wgu5n60se-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wgu5n60se.step` / `wgu5n60se.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wild Goose datasheet](docs/wgu5n60se-datasheet.pdf) (8 pp, sha256 `f9f6d003c3c487e7`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wgu5n60se-datasheet.pdf)