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WGP9N50SE

Public Made by Adom

by adom

Wild Goose MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorswgp9n50sefactory-2.0.0extractor-text

Verified WGP9N50SE

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: WGP9N50SE · TO-220 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-nhmcd2wv/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ wgp9n50se.kicad_sym✓ wgp9n50se.kicad_mod✓ wgp9n50se.step
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WGP9N50SE

Wild Goose · MOSFETs · TO-220

WGP9N50SE from Wild Goose, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate (G) input Gate terminal of the MOSFET, with the gate-source voltage rated at ±30 V (VGSS).
2 Drain (D) passive Drain terminal of the MOSFET, rated for a drain-source voltage of 500 V (VDSS) and a drain current of 9.0 A at Tj=25℃.
3 Source (S) passive Source terminal of the MOSFET; the datasheet gives no source-specific limit, and the maximum continuous body diode forward current IS is 9 A.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 500 V Ta=25℃ unless otherwise noted 1
Drain Current ID 9 A Tj=25℃ 1
Drain Current ID 5.7 A Tj=100℃ 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulse Avalanche Energy EAS 190 mJ note1 1
Avalanche Current IAR 9 A note2 1
Power Dissipation PD 50 W Tj=25℃ 1
Junction Temperature (Max) Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering purpose TL 300 ℃ 1/8 inch from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 1.88 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 500 V ID=250μA，VGS=0 2
Zero Gate Voltage Drain Current IDSS 1 μA Vds=500V, Vgs=0V 2
Zero Gate Voltage Drain Current IDSS 10 μA Vds=400V, Tc=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA Vgs=+30V, Vds=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA Vgs=-30V, Vds=0V 2
Gate Threshold Voltage VGS(th) 2 4 V Id=250uA,Vds=Vgs 2
Static Drain-Source On-Resistance RDS(on) 0.69 0.74 Ω Id=4.5A,Vgs=10V 2
Turn-On Delay Time Td(on) 25 60 nS VDD=250V，ID=9A，RG=25Ω (Note 3,4) 2
Turn-On Rise Time Tr 95 200 nS VDD=250V，ID=9A，RG=25Ω (Note 3,4) 2
Turn-Off Delay Time Td(off) 55 120 nS VDD=250V，ID=9A，RG=25Ω (Note 3,4) 2
Turn-Off Fall Time Tf 60 130 nS VDD=250V，ID=9A，RG=25Ω (Note 3,4) 2
Total Gate Charge Qg 28 36 nC VDS=400,VGS=10V，ID=9A (Note 3,4) 2
Maximum Continuous Drain-Source Diode Forward Current IS 9 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 36 A 2
Drain-Source Diode Forward Voltage VSD 1.45 V Id=9A 2
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.55 V/℃ ID=250μA, Reference to 25℃ 2
Input Capacitance Ciss 1012 pF VDS=25V，VGS=0，f=1.0MHz 2
Output Capacitance Coss 160 pF VDS=25V，VGS=0，f=1.0MHz 2
Reverse Transfer Capacitance Crss 20 pF VDS=25V，VGS=0，f=1.0MHz 2
Gate-Source Charge Qgs 7 nC 2
Gate-Drain Charge Qgd 12.5 nC 2
Reverse Recovery Time trr 300 nS IS=9.0A,VGS=0V diF/dt=100A/μs (Note3) 2
Reverse Recovery Charge Qrr 2.2 μC IS=9.0A,VGS=0V diF/dt=100A/μs (Note3) 2

CAD (KiCad official)

  • Symbol: WGP9N50SE
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: wgp9n50se-etched.step / wgp9n50se-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgp9n50se.step / wgp9n50se.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (7 pp, sha256 3c01085b6e6bec12, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF