component

WGP8N60SE

Public Made by Adom

by adom

Wild Goose MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorswgp8n60sefactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
wgp8n60se / README.md
History Download
Ray Publish 0.1.0 6050b35 7d ago

WGP8N60SE

Wild Goose · MOSFETs · TO-220

WGP8N60SE from Wild Goose, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate (G) terminal of the 600V N-channel MOSFET; gate-source voltage is rated at ±30V (VGSS) per the absolute maximum ratings.
2 Drain passive Drain (D) terminal of the MOSFET, rated at VDSS = 600V with ID = 8.0A at Tj = 25℃ and 4.7A at Tj = 100℃.
3 Source passive Source (S) terminal of the MOSFET, printed as "Sourse" in the datasheet pin list; it serves as the return reference for the gate and drain currents.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 600 V 1
Drain Current (Tj=25℃) ID 8 A Tj=25℃ 1
Drain Current (Tj=100℃) ID 4.7 A Tj=100℃ 1
Gate-Source voltage VGSS 30 V 1
Single Pulse Avalanche Energy EAS 300 mJ note1 1
Avalanche Current IAR 8 A note2 1
Power Dissipation PD 50 W Tj=25℃ 1
Junction Temperature Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering TL 300 ℃ 1/8' from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 2.4 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 600 V ID=250μA，VGS=0 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=650V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS=520V, Tj=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA VGS=+30V, VDS=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V ID=250μA,VDS=VGS 2
Static Drain-Source On-Resistance RDS(ON) 1.25 1.35 Ω ID=4A,VGS=10V 2
Turn-On Delay Time Td(on) 30 70 nS VDD=325V，ID=8A RG=25Ω (Note 3,4) 2
Turn-On Rise Time Tr 80 170 nS 2
Turn-Off Delay Time Td(off) 65 140 nS 2
Turn-Off Rise Time Tf 60 130 nS 2
Total Gate Charge Qg 29 38 nC VDS=520V,VGS=10V，ID=8A (Note 3,4) 2
Max. Diode Forward Current Is 8 A 2
Max. Pulsed Forward Current ISM 28 A 2
Diode Forward Voltage VSD 1.4 V 2
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.67 V/℃ ID=250μA, Reference to 25℃ 2
Input Capacitance Ciss 1000 pF VDS=25V，VGS=0， f=1.0MHz 2
Output Capacitance Coss 95 pF 2
Reverse Transfer Capacitance Crss 2.4 pF 2
Gate-Source Charge Qgs 7 nC 2
Gate-Drain Charge Qgd 14.5 nC 2
Reverse Recovery Time Trr 293 nS IS=8A,VGS =0V diF/dt=100A/μs (Note3) 2
Reverse Recovery Charge Qrr 1.7 μC 2

CAD (KiCad official)

  • Symbol: WGP8N60SE
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: wgp8n60se-etched.step / wgp8n60se-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgp8n60se.step / wgp8n60se.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (7 pp, sha256 31f68e703c36bdbf, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF