component
WGP7N70SE
Public Made by Adomby adom
Wild Goose MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WGP7N70SE
Wild Goose · MOSFETs · TO-220
WGP7N70SE from Wild Goose, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the datasheet rates the gate-source voltage at ±30 V in the absolute maximum ratings. |
| 2 | Drain | passive | Drain terminal; the datasheet rates drain-source voltage at 700 V and drain current at 7 A at Tj=25℃. |
| 3 | Source | passive | Source terminal, the reference for VGS and the body diode; the datasheet gives maximum diode forward current of 7 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain Current Tj=25℃ | ID | 7 | A | Tj=25℃ | 1 | ||
| Drain Current Tj=100℃ | ID | 3.9 | A | Tj=100℃ | 1 | ||
| Drain-Source Voltage | VDSS | 700 | V | 1 | |||
| Gate Threshold Voltage (as printed in Absolute Maximum Ratings) | VGS(TH) | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 300 | mJ | note1 | 1 | ||
| Avalanche Current | IAR | 7 | A | note2 | 1 | ||
| Power Dissipation | PD | 40 | W | Tj=25℃ | 1 | ||
| Junction Temperature (Max) | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | ℃ | 1/8 inch from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 3.2 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Thermal Response Zθ JC(t) (transient, as printed) | Zθ JC(t) | 1.56 | ℃/W | Zθ JC(t) = 1.56 /W Max. (transient thermal response note, page 4) | 4 | ||
| Drain-Source Breakdown Voltage | BVDSS | 700 | V | ID=250μA，VGS=0 | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 3 | 4 | V | ID=250μA,VDS=VGS | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=700V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current at elevated temperature | IDSS | 10 | μA | VDS=560V, Tj=125℃ | 2 | ||
| Gate-body leakage Current, Forward | IGSSF | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-body leakage Current, Reverse | IGSSR | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 1.5 | Ω | ID=3A,VGS=10V | 2 | ||
| Maximum Diode Forward Current | Is | 7 | A | 2 | |||
| Turn-On Delay Time | Td(on) | 13 | 35 | ns | VDD=350V，ID=6A RG=25Ω (Note 3,4) | 2 | |
| Turn-On Rise Time | Tr | 45 | 100 | ns | VDD=350V，ID=6A RG=25Ω (Note 3,4) | 2 | |
| Turn-Off Delay Time | Td(off) | 25 | 60 | ns | VDD=350V，ID=6A RG=25Ω (Note 3,4) | 2 | |
| Turn-Off Rise Time | Tf | 35 | 80 | ns | VDD=350V，ID=6A RG=25Ω (Note 3,4) | 2 | |
| Total Gate Charge | Qg | 30 | 40 | nC | VDS=560V,VGS=10V，ID=6A (Note 3,4) | 2 | |
| Reverse Recovery Time | Trr | 310 | nS | IS=7A,VGS =0V diF/dt=100A/μs (Note3) | 2 | ||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | 0.6 | V/℃ | ID=250μA ,Reference to 25℃ | 2 | ||
| Input Capacitance | Ciss | 1100 | pF | VDS=25V，VGS=0，f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 125 | pF | VDS=25V，VGS=0，f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 15 | pF | VDS=25V，VGS=0，f=1.0MHz | 2 | ||
| Gate-Source Charge | Qgs | 3.5 | nC | VDS=560V,VGS=10V，ID=6A (Note 3,4) | 2 | ||
| Gate-Drain Charge | Qgd | 6.5 | nC | VDS=560V,VGS=10V，ID=6A (Note 3,4) | 2 | ||
| Reverse Recovery Charge | Qrr | 2.1 | μC | IS=7A,VGS =0V diF/dt=100A/μs (Note3) | 2 |
CAD (KiCad official)
- Symbol:
WGP7N70SE - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
wgp7n70se-etched.step/wgp7n70se-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wgp7n70se.step/wgp7n70se.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (7 pp, sha256
1341e9368260ed73, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WGP7N70SE
**Wild Goose** · MOSFETs · TO-220
WGP7N70SE from Wild Goose, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the datasheet rates the gate-source voltage at ±30 V in the absolute maximum ratings. |
| 2 | Drain | passive | Drain terminal; the datasheet rates drain-source voltage at 700 V and drain current at 7 A at Tj=25℃. |
| 3 | Source | passive | Source terminal, the reference for VGS and the body diode; the datasheet gives maximum diode forward current of 7 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain Current Tj=25℃ | ID | | | 7 | A | Tj=25℃ | 1 |
| Drain Current Tj=100℃ | ID | | | 3.9 | A | Tj=100℃ | 1 |
| Drain-Source Voltage | VDSS | | | 700 | V | | 1 |
| Gate Threshold Voltage (as printed in Absolute Maximum Ratings) | VGS(TH) | -30 | | 30 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 300 | mJ | note1 | 1 |
| Avalanche Current | IAR | | | 7 | A | note2 | 1 |
| Power Dissipation | PD | | | 40 | W | Tj=25℃ | 1 |
| Junction Temperature (Max) | Tj | | | 150 | ℃ | | 1 |
| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Maximum lead temperature for soldering | TL | | | 300 | ℃ | 1/8 inch from case for 5 seconds | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 3.2 | ℃/W | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 62.5 | ℃/W | | 1 |
| Thermal Response Zθ JC(t) (transient, as printed) | Zθ JC(t) | | | 1.56 | ℃/W | Zθ JC(t) = 1.56 /W Max. (transient thermal response note, page 4) | 4 |
| Drain-Source Breakdown Voltage | BVDSS | 700 | | | V | ID=250μA，VGS=0 | 2 |
| Gate Threshold Voltage | VGS(TH) | 3 | | 4 | V | ID=250μA,VDS=VGS | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=700V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current at elevated temperature | IDSS | | | 10 | μA | VDS=560V, Tj=125℃ | 2 |
| Gate-body leakage Current, Forward | IGSSF | | | 100 | nA | VGS=+30V, VDS=0V | 2 |
| Gate-body leakage Current, Reverse | IGSSR | | | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 1.5 | Ω | ID=3A,VGS=10V | 2 |
| Maximum Diode Forward Current | Is | | | 7 | A | | 2 |
| Turn-On Delay Time | Td(on) | | 13 | 35 | ns | VDD=350V，ID=6A RG=25Ω (Note 3,4) | 2 |
| Turn-On Rise Time | Tr | | 45 | 100 | ns | VDD=350V，ID=6A RG=25Ω (Note 3,4) | 2 |
| Turn-Off Delay Time | Td(off) | | 25 | 60 | ns | VDD=350V，ID=6A RG=25Ω (Note 3,4) | 2 |
| Turn-Off Rise Time | Tf | | 35 | 80 | ns | VDD=350V，ID=6A RG=25Ω (Note 3,4) | 2 |
| Total Gate Charge | Qg | | 30 | 40 | nC | VDS=560V,VGS=10V，ID=6A (Note 3,4) | 2 |
| Reverse Recovery Time | Trr | | 310 | | nS | IS=7A,VGS =0V diF/dt=100A/μs (Note3) | 2 |
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | | 0.6 | | V/℃ | ID=250μA ,Reference to 25℃ | 2 |
| Input Capacitance | Ciss | | 1100 | | pF | VDS=25V，VGS=0，f=1.0MHz | 2 |
| Output Capacitance | Coss | | 125 | | pF | VDS=25V，VGS=0，f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 15 | | pF | VDS=25V，VGS=0，f=1.0MHz | 2 |
| Gate-Source Charge | Qgs | | 3.5 | | nC | VDS=560V,VGS=10V，ID=6A (Note 3,4) | 2 |
| Gate-Drain Charge | Qgd | | 6.5 | | nC | VDS=560V,VGS=10V，ID=6A (Note 3,4) | 2 |
| Reverse Recovery Charge | Qrr | | 2.1 | | μC | IS=7A,VGS =0V diF/dt=100A/μs (Note3) | 2 |
## CAD (KiCad official)
- Symbol: `WGP7N70SE`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `wgp7n70se-etched.step` / `wgp7n70se-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wgp7n70se.step` / `wgp7n70se.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wild Goose datasheet](docs/wgp7n70se-datasheet.pdf) (7 pp, sha256 `1341e9368260ed73`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wgp7n70se-datasheet.pdf)