component
WGP4N65SE
Public Made by Adomby adom
Wild Goose MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| wgp4n65se-etched.glb | 17d ago |
| wgp4n65se-etched.step | 17d ago |
| wgp4n65se-hero.glb | 17d ago |
| wgp4n65se-hero.overlay.json | 17d ago |
| wgp4n65se.glb | 17d ago |
| wgp4n65se.kicad_mod | 17d ago |
| wgp4n65se.kicad_sym | 17d ago |
| wgp4n65se.lbr | 17d ago |
| wgp4n65se.step | 17d ago |
WGP4N65SE
Wild Goose · MOSFETs · TO-220
WGP4N65SE from Wild Goose, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 650 V N-channel MOSFET; the datasheet lists a gate-source voltage rating of 30 V and tests gate-body leakage at VGS = ±30 V. |
| 2 | D | passive | Drain terminal, rated for a drain-source voltage of 650 V and a continuous drain current of 4.0 A at Tj = 25 ℃ (2.7 A at Tj = 100 ℃). |
| 3 | S | passive | Source terminal, the reference for VDSS and VGS, with a maximum diode forward current of 4 A and a pulsed forward current of 16 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Drain Current | ID | 4 | A | Tj=25℃ | 1 | ||
| Drain Current | ID | 2.7 | A | Tj=100℃ | 1 | ||
| Gate-Source voltage | VGSS | 30 | V | 1 | |||
| Single Pulse Avalanche Energy | EAS | 120 | mJ | 1 | |||
| Avalanche Current | IAR | 4 | A | 1 | |||
| Power Dissipation | PD | 50 | W | Tj=25 ℃ | 1 | ||
| Junction Temperature (Max) | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum lead temperature for soldering purpose | TL | 300 | ℃ | 1/8' from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 2.4 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | ID=250 μA，VGS=0 | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=650V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS =520V, Tj=125℃ | 2 | ||
| Gate-body leakage Current, Forward | IGSSF | 100 | nA | VGS =+30V, VDS=0V | 2 | ||
| Gate-body leakage Current, Reverse | IGSSR | -100 | nA | VGS =-30V,VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | ID=250μA,VDS=VGS | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.5 | Ω | ID=2.0A,VGS =10V | 2 | ||
| Max. Diode Forward Current | IS | 4 | A | 2 | |||
| Max. Pulsed Forward Current | ISM | 16 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.4 | V | ID=4A | 2 |
CAD (KiCad official)
- Symbol:
WGP4N65SE - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
wgp4n65se-etched.step/wgp4n65se-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wgp4n65se.step/wgp4n65se.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (7 pp, sha256
a4c630803579c1c6, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).