component
WGP4N60SE
Public Made by Adomby adom
Wild Goose MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWGP4N60SE
Wild Goose · MOSFETs · TO-220
WGP4N60SE from Wild Goose, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 600 V N-channel MOSFET; the datasheet tests gate-body leakage at VGS = ±30 V with VDS = 0 V (IGSSF/IGSSR up to ±100 nA). |
| 2 | D | passive | Drain terminal; rated for a drain-source voltage of 600 V and a drain current of 4.0 A at Tj = 25 ℃ (2.7 A at Tj = 100 ℃). |
| 3 | S | passive | Source terminal, the reference for the gate drive and drain current; the body diode forward current is limited to 4 A (pulsed 16 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 600 | V | 1 | |||
| Drain Current | ID | 4 | A | Tj=25℃ | 1 | ||
| Drain Current | ID | 2.7 | A | Tj=100℃ | 1 | ||
| Gate Threshold Voltage (as printed in Absolute Maximum Ratings) | VGS(TH) | 30 | V | 1 | |||
| Single Pulse Avalanche Energy | EAS | 120 | mJ | note1 | 1 | ||
| Avalanche Current | IAR | 4 | A | note2 | 1 | ||
| Power Dissipation | PD | 50 | W | Tj=25 ℃ | 1 | ||
| Junction Temperature (Max) | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum lead temperature for soldering purpose | TL | 300 | ℃ | 1/8’from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 2.4 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | ID=250 μA，VGS=0 | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=650V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS=520V, Tj=125℃ | 2 | ||
| Gate-body leakage Current, Forward | IGSSF | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-body leakage Current, Reverse | IGSSR | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | ID=250 μA,VDS=VGS | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.5 | Ω | ID=2.0A,VGS=10V | 2 | ||
| Max. Diode Forward Current | IS | 4 | A | 2 | |||
| Max. Pulsed Forward Current | ISM | 16 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.4 | V | ID=4A | 2 |
CAD (KiCad official)
- Symbol:
WGP4N60SE - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
wgp4n60se-etched.step/wgp4n60se-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wgp4n60se.step/wgp4n60se.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (7 pp, sha256
8edd48d24408d072, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).