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WGP30N10V

Public Made by Adom

by adom

Wild Goose MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WGP30N10V

Wild Goose · MOSFETs · TO-220

WGP30N10V from Wild Goose, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the 100V N-channel MOSFET; the datasheet rates gate-source voltage VGSS at ±20 V.
2 D passive Drain of the MOSFET; continuous drain current is 30 A at Tc=25℃ (12 A at Tc=100℃) with 60 A pulsed.
3 S passive Source of the MOSFET; the datasheet gives no source-specific rating beyond the device's drain-source voltage VDSS of 100 V.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V Tc=25℃ Unless otherwise noted 1
Gate-Source Voltage VGSS -20 20 V Tc=25℃ Unless otherwise noted 1
Drain Current-Continuous ID 30 A Tc=25℃ Unless otherwise noted 1
Drain Current-Continuous (TC=100℃) ID (100℃) 12 A TC=100℃ 1
Pulsed Drain Current IDM 60 A Tc=25℃ Unless otherwise noted 1
Maximum Power Dissipation PD 55 W Tc=25℃ Unless otherwise noted 1
Single pulse avalanche energy (Note 5) EAS 250 mJ Note 5: Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ Tc=25℃ Unless otherwise noted 1
Thermal Resistance, Junction-to-Case (Note 2) RθJC 2.27 ℃/W Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS 100 110 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.8 1.1 1.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 31 35 mΩ VGS=10V, ID=5A 2
Forward Transconductance gFS 12 S VDS=50V,ID=9A 2
Diode Forward Voltage (Note 3) VSD 1.2 V VGS=0V,IS=9A 2
Input Capacitance Clss 1350 PF 2
Output Capacitance Coss 240 PF 2
Reverse Transfer Capacitance Crss 180 PF VDS=25V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 13.8 nS 2
Turn-on Rise Time tr 9.3 nS 2
Turn-Off Delay Time td(off) 43.8 nS 2
Turn-Off Fall Time tf 11.4 nS 2
Total Gate Charge Qg 31 nC 2
Gate-Source Charge Qgs 6.4 nC 2
Gate-Drain Charge Qgd 9.4 nC 2

CAD (KiCad official)

  • Symbol: WGP30N10V
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: wgp30n10v-etched.step / wgp30n10v-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgp30n10v.step / wgp30n10v.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (6 pp, sha256 ccb6e5dc2a4d2e25, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF