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WGP15N65SE

Public Made by Adom

by adom

Wild Goose MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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README.md Publish 0.1.0 · Ray 23d ago
wgp15n65se-etched.glb Publish 0.1.0 · Ray 23d ago
wgp15n65se-etched.step wgp15n65se: factory component page (tier=lcsc) · Ray 23d ago
wgp15n65se-hero.glb wgp15n65se: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
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WGP15N65SE

Wild Goose · MOSFETs · TO-220

WGP15N65SE from Wild Goose, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the MOSFET, with gate-source voltage VGSS rated at ±30 V.
2 D passive Drain terminal, rated for VDSS 650 V with continuous drain current ID of 15 A at TC=25℃ and 9.5 A at TC=100℃.
3 S passive Source terminal, the reference for gate-source voltage, with maximum diode forward current IS of 15 A.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Drain Current, TC=25℃ ID 15 A TC=25℃ 1
Drain Current, TC=100℃ ID 9.5 A TC=100℃ 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulse Avalanche Energy EAS 920 mJ 1
Avalanche Current IAR 15 A 1
Power Dissipation PD 60 W Tc=25℃ 1
Junction Temperature (Max) Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering purpose TL 300 1/8 inch from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 2.08 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 650 V ID=250μA，VGS=0 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=650V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS=480V, Tc=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA VGS=+30V, VDS=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V ID=250μA,VDS=VGS 2
Static Drain-Source On-Resistance RDS(ON) 0.52 Ω VG=10V (Features list) 1
Turn-On Delay Time Td(on) 65 140 ns VDD=325V，ID=15A RG=21.7Ω (Note 3,4) 2
Turn-On Rise Time Tr 125 260 ns VDD=325V，ID=15A RG=21.7Ω (Note 3,4) 2
Turn-Off Delay Time Td(off) 105 220 ns VDD=325V，ID=15A RG=21.7Ω (Note 3,4) 2
Turn-Off Rise Time Tf 65 140 ns VDD=325V，ID=15A RG=21.7Ω (Note 3,4) 2
Total Gate Charge Qg 48.5 63 nC VDS=480V,VGS=10V，ID=15A (Note 3,4) 2
Max. Diode Forward Current IS 15 A 2
Max. Pulsed Forward Current ISM 60 A 2
Diode Forward Voltage VSD 1.4 V ID=15A 2
Reverse Recovery Time Trr 496 nS IS=15A,VGS=0V diF/dt=100A/μs (Note3) 2
Reverse Recovery Charge Qrr 5.69 μC IS=15A,VGS=0V diF/dt=100A/μs (Note3) 2
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.71 V/℃ ID=250μA, reference to 25℃ 2

CAD (KiCad official)

  • Symbol: WGP15N65SE
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: wgp15n65se-etched.step / wgp15n65se-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgp15n65se.step / wgp15n65se.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (7 pp, sha256 eb10ae324cf61502, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF