# WGP13N50SE

**Wild Goose** · MOSFETs · TO-220

WGP13N50SE from Wild Goose, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate (G) | input | Gate terminal of the MOSFET, with gate-body voltage rated at ±30 V (VGS). |
| 2 | Drain (D) | passive | Drain terminal, rated for drain-source voltage VDSS of 500 V and drain current ID of 13 A at Tj=25℃. |
| 3 | Source (S) | passive | Source terminal, the reference for gate-source voltage and the drain-source breakdown voltage BVDSS of 500 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 500 | V |  | 1 |
| Drain Current | ID |  |  | 13 | A | Tj=25℃ | 1 |
| Drain Current | ID |  |  | 7.9 | A | Tj=100℃ | 1 |
| Gate Threshold Voltage (as printed; value matches gate-source voltage) | VGS(TH) | -30 |  | 30 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 500 | mJ | note1 | 1 |
| Avalanche Current | IAR |  |  | 13 | A | note2 | 1 |
| Power Dissipation | PD |  |  | 50 | W | Tj=25℃ | 1 |
| Junction Temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Maximum lead temperature for soldering purpose | TL |  |  | 300 | ℃ | 1/8 inch from case for 5 seconds | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 2.5 | ℃/W |  | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 62.5 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 500 |  |  | V | ID=250μA，VGS=0 | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=500V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 100 | μA | VDS=400V, Tj=125℃ | 2 |
| Gate-body leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS=+30V, VDS=0V | 2 |
| Gate-body leakage Current, Reverse | IGSSR |  |  | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | ID=250μA,VDS=VGS | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 0.45 | 0.5 | Ω | ID=6.5A,VGS=10V | 2 |
| Max. Diode Forward Current | Is |  |  | 13 | A |  | 2 |
| Max. Pulsed Forward Current | ISM |  |  | 52 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `WGP13N50SE`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `wgp13n50se-etched.step` / `wgp13n50se-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wgp13n50se.step` / `wgp13n50se.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wild Goose datasheet](docs/wgp13n50se-datasheet.pdf) (6 pp, sha256 `da85df28c645e2f1`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wgp13n50se-datasheet.pdf)