component
WGP10N65SE
Public Made by Adomby adom
Wild Goose MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWGP10N65SE
Wild Goose · MOSFETs · TO-220
WGP10N65SE from Wild Goose, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; threshold voltage VGS(TH) is 2 V min to 4 V max at ID=250μA, and gate-body leakage is limited to ±100 nA at VGS=±30 V. |
| 2 | Drain | passive | Drain terminal; drain current is rated 10 A at Tj=25℃ and 6.7 A at Tj=100℃, with BVDSS of 650 V. |
| 3 | Source | passive | Source terminal; the body diode forward current is limited to 10 A continuous and 40 A pulsed (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Drain Current | ID | 10 | A | Tj=25℃ | 1 | ||
| Drain Current | ID | 6.7 | A | Tj=100℃ | 1 | ||
| Gate Threshold Voltage | VGS(TH) | 30 | V | 1 | |||
| Single Pulse Avalanche Energy | EAS | 380 | mJ | note1 | 1 | ||
| Avalanche Current | IAR | 10 | A | note2 | 1 | ||
| Power Dissipation | PD | 65 | W | Tj=25℃ | 1 | ||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum lead temperature for soldering purpose | TL | 300 | ℃ | 1/8' from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 2.4 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | ID=250μA，VGS=0 | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=650V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS=520V, Tj=125℃ | 2 | ||
| Gate-body leakage Current, Forward | IGSSF | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-body leakage Current, Reverse | IGSSR | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | ID=250μA,VDS=VGS | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.8 | 0.9 | Ω | ID=5.0A,VGS=10V | 2 | |
| Maximum Diode Forward Current | Is | 10 | A | 2 | |||
| Max. Pulsed Forward Current | ISM | 40 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.4 | V | ID=10A | 2 | ||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | 0.67 | V/℃ | ID=250μA ,Reference to 25℃ | 2 | ||
| Input Capacitance | Ciss | 1500 | pF | VDS=25V，VGS =0， f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 194 | pF | VDS=25V，VGS =0， f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 18 | pF | VDS=25V，VGS =0， f=1.0MHz | 2 | ||
| Turn-On Delay Time | Td(on) | 23 | nS | VDD=325V，ID=10A RG =25Ω (Note 3,4) | 2 | ||
| Turn-On Rise Time | Tr | 15 | nS | VDD=325V，ID=10A RG =25Ω (Note 3,4) | 2 | ||
| Turn-Off Delay Time | Td(off) | 90 | nS | VDD=325V，ID=10A RG =25Ω (Note 3,4) | 2 | ||
| Turn-Off Rise Time | Tf | 30 | nS | VDD=325V，ID=10A RG =25Ω (Note 3,4) | 2 | ||
| Total Gate Charge | Qg | 35 | nC | VDS=520V,VGS=10V，ID=10A (Note 3,4) | 2 | ||
| Gate-Source Charge | Qgs | 7 | nC | VDS=520V,VGS=10V，ID=10A (Note 3,4) | 2 | ||
| Gate-Drain Charge | Qgd | 18 | nC | VDS=520V,VGS=10V，ID=10A (Note 3,4) | 2 | ||
| Reverse Recovery Time | Trr | 320 | nS | IS=10A,VGS =0V diF/dt=100A/μs (Note3) | 2 | ||
| Reverse Recovery Charge | Qrr | 4.2 | μC | 2 |
CAD (KiCad official)
- Symbol:
WGP10N65SE - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
wgp10n65se-etched.step/wgp10n65se-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wgp10n65se.step/wgp10n65se.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (7 pp, sha256
faae5832f39c1422, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).