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WGF9N50SE

Wild Goose · MOSFETs · TO-220F

WGF9N50SE from Wild Goose, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET; gate-source voltage VGSS is rated ±30 V.
2 Drain passive Drain terminal; drain-source voltage VDSS is rated 500 V and drain current ID is 9.0 A at Tj=25℃.
3 Source passive Source terminal, the reference for gate-source voltage (±30 V) and drain current ratings.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-220F
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 500 V 1
Drain Current (Tj=25℃) ID 9 A Tj=25℃ 1
Drain Current (Tj=100℃) ID 5.7 A Tj=100℃ 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulse Avalanche Energy EAS 190 mJ note1 1
Avalanche Current IAR 9 A note2 1
Power Dissipation PD 50 W Tj=25℃ 1
Junction Temperature (Max) Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering TL 300 ℃ 1/8 inch from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 1.88 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 500 V ID=250μA,VGS=0 2
Zero Gate Voltage Drain Current IDSS 1 μA Vds=500V, Vgs=0V 2
Zero Gate Voltage Drain Current at 125℃ IDSS 10 μA Vds=400V, Tc=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA Vgs=+30V, Vds=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA Vgs=-30V, Vds=0V 2
Gate Threshold Voltage VGS(th) 2 4 V Id=250uA,Vds=Vgs 2
Static Drain-Source On-Resistance RDS(on) 0.65 0.7 Ω Id=4.5A,Vgs=10V 2
Turn-On Delay Time Td(on) 25 60 nS VDD=250V,ID=9A,RG=25Ω (Note 3,4) 2
Turn-On Rise Time Tr 95 200 nS VDD=250V,ID=9A,RG=25Ω (Note 3,4) 2
Turn-Off Delay Time Td(off) 55 120 nS VDD=250V,ID=9A,RG=25Ω (Note 3,4) 2
Turn-Off Fall Time Tf 60 130 nS VDD=250V,ID=9A,RG=25Ω (Note 3,4) 2
Total Gate Charge Qg 28 36 nC VDS=400,VGS=10V,ID=9A (Note 3,4) 2
Maximum Continuous Drain-Source Diode Forward Current IS 9 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 36 A 2
Drain-Source Diode Forward Voltage VSD 1.45 V Id=9A 2
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.55 V/℃ ID=250μA ,Reference to 25℃ 2
Input Capacitance Ciss 1012 pF VDS=25V,VGS=0,f=1.0MHz 2
Output Capacitance Coss 160 pF VDS=25V,VGS=0,f=1.0MHz 2
Reverse Transfer Capacitance Crss 20 pF VDS=25V,VGS=0,f=1.0MHz 2
Gate-Source Charge Qgs 7 nC VDS=400,VGS=10V,ID=9A (Note 3,4) 2
Reverse Recovery Time trr 300 nS IS=9.0A,VGS =0V diF/dt=100A/μs (Note3) 2
Reverse Recovery Charge Qrr 2.2 μC IS=9.0A,VGS =0V diF/dt=100A/μs (Note3) 2

CAD (KiCad official)

  • Symbol: WGF9N50SE
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (7 pp, sha256 ab8712560902778a, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF