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WGF5N60SE

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Wild Goose MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WGF5N60SE

Wild Goose · MOSFETs · TO-220F

WGF5N60SE from Wild Goose, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, rated for a gate-source voltage VGSS of ±30 V.
2 Drain passive Drain terminal of the N-channel MOSFET, with drain-source voltage VDSS rated at 600 V and drain current ID rated at 5 A (Tj=25℃).
3 Source passive Source terminal of the N-channel MOSFET, forming the drain-source path rated at 600 V VDSS.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 600 V 1
Drain Current ID 5 A Tj=25℃ 1
Drain Current ID 2.5 A Tj=100℃ 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulse Avalanche Energy EAS 128 mJ 1
Avalanche Current IAR 4 A 1
Power Dissipation PD 36 W Tj=25℃ 1
Junction Temperature (Max) Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering purpose TL 300 ℃ 1/8” from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 3.47 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 600 V ID=250μA，VGS=0 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=600V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS=480V, Tj=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA VGS=+30V, VDS=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V ID=250μA,VDS=VGS 2
Static Drain-Source On-Resistance RDS(ON) 2.3 Ω ID=2A,VGS=10V 2
Turn-On Delay Time Td(on) 13 35 ns VDD=300V，ID=4A RG=25Ω (Note 3,4) 2
Turn-On Rise Time Tr 45 100 ns VDD=300V，ID=4A RG=25Ω (Note 3,4) 2
Turn-Off Delay Time Td(off) 20 60 ns VDD=300V，ID=4A RG=25Ω (Note 3,4) 2
Turn-Off Rise Time Tf 35 80 ns VDD=300V，ID=4A RG=25Ω (Note 3,4) 2
Max. Diode Forward Current Is 4 A 2
Max. Pulsed Forward Current ISM 16 A 2
Diode Forward Voltage VSD 1.4 V ID=4A 2
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.6 V/℃ ID=250μA ,Reference to 25℃ 2
Input Capacitance Ciss 620 pF VDS=25V，VGS=0，f=1.0MHz 2
Output Capacitance Coss 70 pF VDS=25V，VGS=0，f=1.0MHz 2
Reverse Transfer Capacitance Crss 8 pF VDS=25V，VGS=0，f=1.0MHz 2
Total Gate Charge Qg 13.3 nC VDS=480V,VGS=10V，ID=4A (Note 3,4) 2
Gate-Source Charge Qgs 3.4 nC VDS=480V,VGS=10V，ID=4A (Note 3,4) 2
Gate-Drain Charge Qgd 7.1 nC VDS=480V,VGS=10V，ID=4A (Note 3,4) 2
Reverse Recovery Time Trr 390 ns IS=4A,VGS=0V diF/dt=100A/μs (Note3) 2
Reverse Recovery Charge Qrr 1.5 μC IS=4A,VGS=0V diF/dt=100A/μs (Note3) 2

CAD (KiCad official)

  • Symbol: WGF5N60SE
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (7 pp, sha256 45c7880c2a6ec4d8, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF