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Contents

README

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WGF4N60SE

Wild Goose · MOSFETs · TO-220F

WGF4N60SE from Wild Goose, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate (G) input Gate terminal; the datasheet rates gate-source voltage at ±30 V (VGS=+30V and VGS=-30V leakage tests).
2 Drain (D) passive Drain terminal; the part is rated for 600 V drain-source voltage (VDSS) and 4.0 A drain current at Tj=25℃.
3 Source (S) passive Source terminal, the reference for the gate-source and drain-source ratings in the datasheet.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 600 V ID=250 μA,VGS=0 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=650V, VGS=0V 2
Zero Gate Voltage Drain Current at Tj=125℃ IDSS 100 μA VDS=520V, Tj=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA VGS=+30V, VDS=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V ID=250 μA,VDS=VGS 2
Max. Diode Forward Current IS 4 A 2
Max. Pulsed Forward Current ISM 16 A 2
Diode Forward Voltage VSD 1.4 V ID=4A 2
Drain-Source Voltage VDSS 600 V 1
Drain Current ID 4 A Tj=25℃ 1
Drain Current ID 2.7 A Tj=100℃ 1
Gate-Source voltage VGSS 30 V 1
Single Pulse Avalanche Energy EAS 120 mJ note1 1
Avalanche Current IAR 4 A note2 1
Power Dissipation PD 50 W Tj=25℃ 1
Junction Temperature Tj 150 ℃ Max 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering purpose TL 300 ℃ 1/8' from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 2.4 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.67 V/℃ ID=250 μA, Reference to 25 ℃ 2
Static Drain-Source On-Resistance RDS(ON) 2.5 Ω ID=2.0A,VGS=10V 2
Input Capacitance Ciss 560 pF VDS=25V, VGS=0, f=1.0MHz 2
Output Capacitance Coss 48 pF VDS=25V, VGS=0, f=1.0MHz 2
Reverse Transfer Capacitance Crss 5.4 pF VDS=25V, VGS=0, f=1.0MHz 2
Turn-On Delay Time Td(on) 25 nS VDD=325V, ID=4A, RG=25Ω (Note 3,4) 2
Turn-On Rise Time Tr 45 nS VDD=325V, ID=4A, RG=25Ω (Note 3,4) 2
Turn-Off Delay Time Td(off) 25 nS VDD=325V, ID=4A, RG=25Ω (Note 3,4) 2
Turn-Off Rise Time Tf 35 nS VDD=325V, ID=4A, RG=25Ω (Note 3,4) 2
Gate-Source Charge Qgs 2.8 nC VDS=520V,VGS=10V, ID=4A (Note 3,4) 2
Gate-Drain Charge Qgd 4.5 nC VDS=520V,VGS=10V, ID=4A (Note 3,4) 2
Reverse Recovery Time Trr 393 nS IS=4A,VGS=0V, diF/dt=100A/μs (Note3) 2
Reverse Recovery Charge Qrr 1.5 μC IS=4A,VGS=0V, diF/dt=100A/μs (Note3) 2

CAD (KiCad official)

  • Symbol: WGF4N60SE
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (7 pp, sha256 41e7d441a972c1a3, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF