# WGF30N65SE

**Wild Goose** · MOSFETs · TO-220F

WGF30N65SE from Wild Goose, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate (G) | input | Gate terminal of the MOSFET; gate-source voltage is rated ±30 V (VGSS), and the gate is driven at VGS = 10 V for the specified RDS(on). |
| 2 | Drain (D) | passive | Drain terminal; drain-source voltage is rated 650 V (VDSS) and continuous drain current 30 A at TC = 25ºC. |
| 3 | Source (S) | passive | Source terminal and reference for the gate-source voltage, which is rated ±30 V (VGSS). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 650 | V | VGS = 0V | 1 |
| Continuous Drain Current | ID |  |  | 30 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | 120 | A | note1 | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 1350 | mJ | note2 | 1 |
| Avalanche Current | IAR |  |  | 30 | A | note1 | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 90 | mJ | note1 | 1 |
| Power Dissipation | PD |  |  | 150 | W | TC = 25ºC | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ºC |  | 1 |
| Thermal Resistance, Junction-to-Case | RthJC |  |  | 0.85 | ºC/W |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA |  |  | 62.5 | ºC/W |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 650V, VGS = 0V, TJ = 25ºC | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ±30V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 3 |  | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 0.29 | 0.32 | Ω | VGS = 10V, ID = 15A | 2 |
| Continuous Body Diode Current | IS |  |  | 30 | A | TC = 25 ºC | 2 |
| Pulsed Diode Forward Current | ISM |  |  | 120 | A |  | 2 |
| Body Diode Voltage | VSD |  |  | 1.4 | V | TJ = 25ºC, ISD = 30A, VGS = 0V | 2 |

## CAD (KiCad official)

- Symbol: `WGF30N65SE`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wild Goose datasheet](docs/wgf30n65se-datasheet.pdf) (6 pp, sha256 `7ea640adc8650fff`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wgf30n65se-datasheet.pdf)