component
WGF20N65SE
Public Made by Adomby adom
Wild Goose MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWGF20N65SE
Wild Goose · MOSFETs · TO-220F
WGF20N65SE from Wild Goose, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage is limited to ±30 V (VGSS). |
| 2 | Drain | passive | Drain terminal; drain-source voltage is rated 650 V (VDSS) with drain current of 20 A at TC=25℃. |
| 3 | Source | passive | Source terminal and reference for the gate and drain ratings; maximum diode forward current is 20 A (Is). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Drain Current | ID | 20 | A | TC=25℃ | 1 | ||
| Drain Current | ID | 12.5 | A | TC=100℃ | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 580 | mJ | note1 | 1 | ||
| Avalanche Current | IAR | 20 | A | note2 | 1 | ||
| Power Dissipation | PD | 84 | W | Tc=25℃ | 1 | ||
| Junction Temperature (Max) | Tj | 150 | 1 | ||||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum lead temperature for soldering purpose | TL | 300 | 1/8 inch from case for 5 seconds | 1 | |||
| Thermal Resistance, Junction to Case | RθJC | 1.48 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | ID=250μA，VGS=0 | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=650V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS=520V, Tc=125℃ | 2 | ||
| Gate-body leakage Current, Forward | IGSSF | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-body leakage Current, Reverse | IGSSR | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | ID=250μA,VDS=VGS | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.35 | 0.42 | Ω | ID=10A,VGS=10V | 2 | |
| Turn-On Delay Time | Td(on) | 62 | 135 | ns | VDD=325V，ID=20A RG=25Ω (Note 3,4) | 2 | |
| Turn-On Rise Time | Tr | 140 | 290 | ns | 2 | ||
| Turn-Off Delay Time | Td(off) | 230 | 470 | ns | 2 | ||
| Turn-Off Rise Time | Tf | 65 | 140 | ns | 2 | ||
| Total Gate Charge | Qg | 75 | 98 | nC | VDS=520,VGS=10V，ID=20A (Note 3,4) | 2 | |
| Gate-Source Charge | Qgs | 13.5 | 18 | nC | 2 | ||
| Max. Diode Forward Current | Is | 20 | A | 2 | |||
| Max. Pulsed Forward Current | ISM | 80 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.4 | V | ID=20A | 2 |
CAD (KiCad official)
- Symbol:
WGF20N65SE - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (7 pp, sha256
4182c74ee2f097ed, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).