component
WGD9N50SE
Public Made by Adomby adom
Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WGD9N50SE
Wild Goose · MOSFETs · TO-252
WGD9N50SE from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate (G) | input | Gate of the MOSFET; the absolute maximum gate-source voltage VGSS is ±30 V. |
| 2 | Drain (D) | passive | Drain of the MOSFET; the absolute maximum drain-source voltage VDSS is 500 V and the drain current ID is 9.0 A at Tj=25℃. |
| 3 | Source (S) | passive | Source of the MOSFET; the maximum continuous body-diode forward current IS is 9 A and the pulsed current ISM is 36 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | ID=250μA, VGS=0 | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | Vds=500V, Vgs=0V | 2 | ||
| Zero Gate Voltage Drain Current (Tc=125℃) | IDSS | 10 | μA | Vds=400V, Tc=125℃ | 2 | ||
| Gate-body leakage Current, Forward | IGSSF | 100 | nA | Vgs=+30V, Vds=0V | 2 | ||
| Gate-body leakage Current, Reverse | IGSSR | -100 | nA | Vgs=-30V, Vds=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | Id=250uA, Vds=Vgs | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.65 | 0.7 | Ω | Id=4.5A, Vgs=10V | 2 | |
| Turn-On Delay Time | Td(on) | 25 | 60 | nS | VDD=250V, ID=9A, RG=25Ω (Note 3,4) | 2 | |
| Turn-On Rise Time | Tr | 95 | 200 | nS | VDD=250V, ID=9A, RG=25Ω (Note 3,4) | 2 | |
| Turn-Off Delay Time | Td(off) | 55 | 120 | nS | VDD=250V, ID=9A, RG=25Ω (Note 3,4) | 2 | |
| Turn-Off Fall Time | Tf | 60 | 130 | nS | VDD=250V, ID=9A, RG=25Ω (Note 3,4) | 2 | |
| Total Gate Charge | Qg | 28 | 36 | nC | VDS=400, VGS=10V, ID=9A (Note 3,4) | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 9 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 36 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.45 | V | Id=9A | 2 | ||
| Drain-Source Voltage | VDSS | 500 | V | 1 | |||
| Drain Current (Tj=25℃) | ID | 9 | A | Tj=25℃ | 1 | ||
| Drain Current (Tj=100℃) | ID | 5.7 | A | Tj=100℃ | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 190 | mJ | note 1 | 1 | ||
| Avalanche Current | IAR | 9 | A | note 2 | 1 | ||
| Power Dissipation | PD | 30 | W | Tj=25℃ | 1 | ||
| Junction Temperature (Max) | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | ℃ | 1/8" from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.88 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
WGD9N50SE - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wgd9n50se-etched.step/wgd9n50se-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wgd9n50se.step/wgd9n50se.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (7 pp, sha256
e8c6c9a04e446166, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WGD9N50SE
**Wild Goose** · MOSFETs · TO-252
WGD9N50SE from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate (G) | input | Gate of the MOSFET; the absolute maximum gate-source voltage VGSS is ±30 V. |
| 2 | Drain (D) | passive | Drain of the MOSFET; the absolute maximum drain-source voltage VDSS is 500 V and the drain current ID is 9.0 A at Tj=25℃. |
| 3 | Source (S) | passive | Source of the MOSFET; the maximum continuous body-diode forward current IS is 9 A and the pulsed current ISM is 36 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 500 | | | V | ID=250μA, VGS=0 | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | Vds=500V, Vgs=0V | 2 |
| Zero Gate Voltage Drain Current (Tc=125℃) | IDSS | | | 10 | μA | Vds=400V, Tc=125℃ | 2 |
| Gate-body leakage Current, Forward | IGSSF | | | 100 | nA | Vgs=+30V, Vds=0V | 2 |
| Gate-body leakage Current, Reverse | IGSSR | | | -100 | nA | Vgs=-30V, Vds=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | Id=250uA, Vds=Vgs | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 0.65 | 0.7 | Ω | Id=4.5A, Vgs=10V | 2 |
| Turn-On Delay Time | Td(on) | | 25 | 60 | nS | VDD=250V, ID=9A, RG=25Ω (Note 3,4) | 2 |
| Turn-On Rise Time | Tr | | 95 | 200 | nS | VDD=250V, ID=9A, RG=25Ω (Note 3,4) | 2 |
| Turn-Off Delay Time | Td(off) | | 55 | 120 | nS | VDD=250V, ID=9A, RG=25Ω (Note 3,4) | 2 |
| Turn-Off Fall Time | Tf | | 60 | 130 | nS | VDD=250V, ID=9A, RG=25Ω (Note 3,4) | 2 |
| Total Gate Charge | Qg | | 28 | 36 | nC | VDS=400, VGS=10V, ID=9A (Note 3,4) | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 9 | A | | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 36 | A | | 2 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.45 | V | Id=9A | 2 |
| Drain-Source Voltage | VDSS | | | 500 | V | | 1 |
| Drain Current (Tj=25℃) | ID | | | 9 | A | Tj=25℃ | 1 |
| Drain Current (Tj=100℃) | ID | | | 5.7 | A | Tj=100℃ | 1 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 190 | mJ | note 1 | 1 |
| Avalanche Current | IAR | | | 9 | A | note 2 | 1 |
| Power Dissipation | PD | | | 30 | W | Tj=25℃ | 1 |
| Junction Temperature (Max) | Tj | | | 150 | ℃ | | 1 |
| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Maximum Lead Temperature for Soldering | TL | | | 300 | ℃ | 1/8" from case for 5 seconds | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 1.88 | ℃/W | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 62.5 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `WGD9N50SE`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `wgd9n50se-etched.step` / `wgd9n50se-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wgd9n50se.step` / `wgd9n50se.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wild Goose datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8600789012113985536) (7 pp, sha256 `e8c6c9a04e446166`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wgd9n50se-datasheet.pdf)