component
WGD85N06
Public Made by Adomby adom
Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| wgd85n06-etched.glb | 17d ago |
| wgd85n06-etched.step | 17d ago |
| wgd85n06-hero.glb | 17d ago |
| wgd85n06-hero.overlay.json | 17d ago |
| wgd85n06.glb | 17d ago |
| wgd85n06.kicad_mod | 17d ago |
| wgd85n06.kicad_sym | 17d ago |
| wgd85n06.lbr | 17d ago |
| wgd85n06.step | 17d ago |
WGD85N06
Wild Goose · MOSFETs · TO-252
WGD85N06 from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the datasheet rates the gate-source voltage at ±20 V (VGSS). |
| 2 | Drain | passive | Drain terminal; rated for 60 V drain-source voltage (VDSS) and 85 A continuous drain current at TC = 25℃ (52 A at TC = 100℃). |
| 3 | Source | passive | Source terminal and reference for the gate-source rating (±20 V) and the drain-source rating (60 V VDSS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 85 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | 52 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 340 | A | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 169 | mJ | 1 | |||
| Power Dissipation | PD | 108 | W | TC = 25℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.4 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 5.3 | 7 | mΩ | VGS=10V, ID=30A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 85 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 320 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=40A | 2 |
CAD (KiCad official)
- Symbol:
WGD85N06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wgd85n06-etched.step/wgd85n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wgd85n06.step/wgd85n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (6 pp, sha256
2e8b76d517519ef3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).