component

WGD7N65SE

Public Made by Adom

by adom

Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorswgd7n65sefactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
wgd7n65se / README.md
History Download
Ray Publish 0.1.0 7296a56 23d ago

WGD7N65SE

Wild Goose · MOSFETs · TO-252

WGD7N65SE from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET, with the datasheet rating for gate-source voltage of ±30 V (VGSS).
2 Drain passive Drain terminal of the MOSFET, rated for a drain-source voltage of 650 V (VDSS) and a continuous drain current of 7.0 A at Tj=25℃.
3 Source passive Source terminal of the MOSFET, referenced to the 650 V drain-source and ±30 V gate-source ratings given in the datasheet.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 650 V ID=250μA, VGS=0 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=650V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS=520V, Tj=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA VGS=+30V, VDS=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V ID=250μA, VDS=VGS 2
Static Drain-Source On-Resistance RDS(ON) 1.25 1.35 Ω ID=3.5A, VGS=10V 2
Turn-On Delay Time Td(on) 30 70 nS VDD=325V, ID=7A, RG=25Ω (Note 3,4) 2
Turn-On Rise Time Tr 80 170 nS VDD=325V, ID=7A, RG=25Ω (Note 3,4) 2
Turn-Off Delay Time Td(off) 65 140 nS VDD=325V, ID=7A, RG=25Ω (Note 3,4) 2
Turn-Off Rise Time Tf 60 130 nS VDD=325V, ID=7A, RG=25Ω (Note 3,4) 2
Total Gate Charge Qg 29 38 nC VDS=520V, VGS=10V, ID=7A (Note3,4) 2
Max. Diode Forward Current Is 7 A 2
Max. Pulsed Forward Current ISM 28 A 2
Diode Forward Voltage VSD 1.4 V ID=7A 2
Drain-Source Voltage VDSS 650 V 1
Drain Current ID 7 A Tj=25℃ 1
Drain Current ID 4.7 A Tj=100℃ 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulse Avalanche Energy EAS 300 mJ note 1 1
Avalanche Current IAR 7 A note 2 1
Power Dissipation PD 50 W Tj=25℃ 1
Junction Temperature (Max) Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering purpose TL 300 ℃ 1/8' from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 2.4 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1

CAD (KiCad official)

  • Symbol: WGD7N65SE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wgd7n65se-etched.step / wgd7n65se-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgd7n65se.step / wgd7n65se.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (7 pp, sha256 947bf3067e31b6f8, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF