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WGD7N60SE

Wild Goose · MOSFETs · TO-252

WGD7N60SE from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET; gate-source voltage is rated at ±30 V (VGSS), and gate-body leakage is specified at ±100 nA for VGS = ±30 V.
2 Drain passive Drain terminal, rated for a drain-source voltage of 600 V (VDSS) and a continuous drain current of 7.0 A at Tj = 25 ℃ (4.7 A at Tj = 100 ℃).
3 Source passive Source terminal; the body diode forward current is limited to a maximum of 7 A (pulsed maximum 28 A) and the diode forward voltage is at most 1.4 V at ID = 7 A.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 600 V 1
Drain Current ID 7 A Tj=25℃ 1
Drain Current ID 4.7 A Tj=100℃ 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulse Avalanche Energy (note1) EAS 300 mJ 1
Avalanche Current (note2) IAR 7 A 1
Power Dissipation PD 50 W Tj=25℃ 1
Junction Temperature (Max) Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering purpose TL 300 ℃ 1/8’from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 2.4 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 600 V ID=250μA, VGS=0 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=600V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS=480V, Tj=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA VGS=+30V, VDS=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V ID=250μA, VDS=VGS 2
Static Drain-Source On-Resistance RDS(ON) 1.2 1.3 Ω ID=3.5A, VGS=10V 2
Turn-On Delay Time Td(on) 30 70 nS VDD=310V, ID=7A, RG=25Ω (Note 3,4) 2
Turn-On Rise Time Tr 80 170 nS VDD=310V, ID=7A, RG=25Ω (Note 3,4) 2
Turn-Off Delay Time Td(off) 65 140 nS VDD=310V, ID=7A, RG=25Ω (Note 3,4) 2
Turn-Off Rise Time Tf 60 130 nS VDD=310V, ID=7A, RG=25Ω (Note 3,4) 2
Total Gate Charge Qg 29 38 nC VDS=480V, VGS=10V, ID=7A (Note3,4) 2
Gate-Source Charge Qgs 7 nC 2
Max. Diode Forward Current Is 7 A 2
Max. Pulsed Forward Current ISM 28 A 2
Diode Forward Voltage VSD 1.4 V ID=7A 2

CAD (KiCad official)

  • Symbol: WGD7N60SE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wgd7n60se-etched.step / wgd7n60se-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgd7n60se.step / wgd7n60se.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (7 pp, sha256 f6ef3edb2f74d573, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF