# WGD65R550L

**Wild Goose** · MOSFETs · TO-252

WGD65R550L from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 650V N-channel MOSFET; the datasheet limits gate-source voltage VGS to ±30 V. |
| 2 | D | passive | Drain terminal of the MOSFET; the datasheet rates drain-source voltage VDS at 650 V and continuous drain current ID at 7.0 A (TC=25°C). |
| 3 | S | passive | Source terminal of the MOSFET; the datasheet rates continuous source current IS at 7.0 A and pulsed source current ISM at 28 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 650 | V |  | 1 |
| Gate-source voltage | VGS | -30 |  | 30 | V |  | 1 |
| Drain current (continuous) | ID |  |  | 7 | A | TC=25°C | 1 |
| Drain current (continuous) | ID |  |  | 4.4 | A | TC=100°C | 1 |
| Pulsed drain current | IDM |  |  | 28 | A |  | 1 |
| Power dissipation | PD |  |  | 60 | W | TC=25°C | 1 |
| Single pulse avalanche energy | EAS |  |  | 261 | mJ |  | 1 |
| Body diode dv/dt | dv/dt |  |  | 15 | V/ns |  | 1 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns |  | 1 |
| Operating junction temperature range | TJ | -55 |  | 150 | °C |  | 1 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 1 |
| Drain-source breakdown voltage | BVDSS | 650 |  |  | V | VGS=0V, ID=250µA | 2 |
| Drain-source leakage current | IDSS |  |  | 1 | µA | VDS=650V, VGS=0V | 2 |
| Gate-source leakage current | IGSS | -100 |  | 100 | nA | VGS=±30V, VDS=0V | 2 |
| Gate threshold voltage | VGS(th) | 2 |  | 4 | V | VGS=VDS, ID=250µA | 2 |
| Static drain-source on-resistance | RDS(on) |  | 0.55 | 0.64 | Ω | VGS=10V, ID=3.5A | 2 |
| Continuous source current | IS |  |  | 7 | A |  | 2 |
| Pulsed source current | ISM |  |  | 28 | A |  | 2 |
| Diode forward voltage | VSD |  |  | 1.4 | V | IS=7.0A, VGS=0V | 2 |
| Thermal resistance, junction to case | RθJC |  | 2.08 |  | °C/W |  | 1 |
| Thermal resistance, junction to ambient | RθJA |  | 62 |  | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `WGD65R550L`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `wgd65r550l-etched.step` / `wgd65r550l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wgd65r550l.step` / `wgd65r550l.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wild Goose datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603093061543620608) (6 pp, sha256 `6a75ca038df426ef`, retrieved 2026-10-18, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wgd65r550l-datasheet.pdf)