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WGD5N60SE

Public Made by Adom

by adom

Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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README.md Publish 0.1.0 · Ray 17d ago
wgd5n60se-etched.glb Publish 0.1.0 · Ray 17d ago
wgd5n60se-etched.step wgd5n60se: factory component page (tier=lcsc) · Ray 17d ago
wgd5n60se-hero.glb wgd5n60se: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
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WGD5N60SE

Wild Goose · MOSFETs · TO-252

WGD5N60SE from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal (pin 1 of the TO-251/TO-252 pinout); the datasheet rates gate-source voltage VGSS at ±30 V.
2 D passive Drain terminal (pin 2 of the TO-251/TO-252 pinout); the datasheet rates drain-source voltage VDSS at 600 V and drain current ID at 5 A (Tj=25℃).
3 S passive Source terminal (pin 3 of the TO-251/TO-252 pinout); the datasheet gives no separate pin-specific limit beyond the absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 600 V 1
Drain Current ID 5 A Tj=25℃ 1
Drain Current ID 3 A Tj=100℃ 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulse Avalanche Energy EAS 128 mJ note1 1
Avalanche Current IAR 5 A note2 1
Power Dissipation PD 50 W Tj=25℃ 1
Junction Temperature (Max) Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering purpose TL 300 ℃ 1/8 inch from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 2.5 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 600 V ID=250μA, VGS=0 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=600V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS=480V, Tj=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA VGS=+30V, VDS=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V ID=250μA, VDS=VGS 2
Static Drain-Source On-Resistance RDS(ON) 2.3 Ω ID=2A, VGS=10V 2
Turn-On Delay Time Td(on) 13 35 ns VDD=300V, ID=4A, RG=25Ω (Note 3,4) 2
Turn-On Rise Time Tr 45 100 ns VDD=300V, ID=4A, RG=25Ω (Note 3,4) 2
Turn-Off Delay Time Td(off) 20 60 ns VDD=300V, ID=4A, RG=25Ω (Note 3,4) 2
Turn-Off Rise Time Tf 35 80 ns VDD=300V, ID=4A, RG=25Ω (Note 3,4) 2
Max. Diode Forward Current IS 5 A 2
Max. Pulsed Forward Current ISM 20 A 2
Diode Forward Voltage VSD 1.4 V ID=4A 2

CAD (KiCad official)

  • Symbol: WGD5N60SE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wgd5n60se-etched.step / wgd5n60se-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgd5n60se.step / wgd5n60se.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (8 pp, sha256 f9f6d003c3c487e7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF