# WGD5N50SE

**Wild Goose** · MOSFETs · TO-252

WGD5N50SE from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate (G) | input | Gate terminal of the MOSFET; gate-source voltage is rated ±30 V (VGSS). |
| 2 | Drain (D) | passive | Drain terminal; rated 500 V drain-source (VDSS) and 5.0 A continuous drain current at Tj=25℃. |
| 3 | Source (S) | passive | Source terminal; the reverse body diode is rated 5.0 A maximum forward current (IS). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 500 | V |  | 1 |
| Drain Current (Tj=25℃) | ID |  |  | 5 | A | Tj=25℃ | 1 |
| Drain Current (Tj=100℃) | ID |  |  | 2.2 | A | Tj=100℃ | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 270 | mJ | note1 | 1 |
| Avalanche Current | IAR |  |  | 5 | A | note2 | 1 |
| Power Dissipation | PD |  |  | 25 | W | Tj=25℃ | 1 |
| Junction Temperature (Max) | Tj |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Maximum Lead Temperature for Soldering | TL |  |  | 300 | ℃ | 1/8 inch from case for 5 seconds | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 3.45 | ℃/W |  | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 110 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 500 |  |  | V | ID=250μA, VGS=0 | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=500V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | μA | VDS=400V, Tj=125℃ | 2 |
| Gate-body Leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS=+30V, VDS=0V | 2 |
| Gate-body Leakage Current, Reverse | IGSSR |  |  | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | ID=250μA, VDS=VGS | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 1.4 | Ω | ID=2.5A, VGS=10V | 2 |
| Turn-On Delay Time | Td(on) |  | 13 | 35 | ns | VDD=250V, ID=5A, RG=25Ω | 2 |
| Turn-On Rise Time | Tr |  | 55 | 120 | ns | VDD=250V, ID=5A, RG=25Ω | 2 |
| Turn-Off Delay Time | Td(off) |  | 25 | 60 | ns | VDD=250V, ID=5A, RG=25Ω | 2 |
| Turn-Off Rise Time | Tf |  | 35 | 80 | ns | VDD=250V, ID=5A, RG=25Ω | 2 |
| Total Gate Charge | Qg |  | 13 | 17 | nC | VDS=400V, VGS=10V, ID=5A | 2 |
| Max. Diode Forward Current | Is |  |  | 5 | A |  | 2 |
| Max. Pulsed Forward Current | ISM |  |  | 20 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.5 | V | ID=5A | 2 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ |  | 0.47 |  | V/℃ | ID=250μA, reference to 25℃ | 2 |

## CAD (KiCad official)

- Symbol: `WGD5N50SE`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `wgd5n50se-etched.step` / `wgd5n50se-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wgd5n50se.step` / `wgd5n50se.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wild Goose datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603093055088586752) (7 pp, sha256 `f76394ed4c571284`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wgd5n50se-datasheet.pdf)