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wgd30n10

Public Made by Adom

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Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WGD30N10

Wild Goose · MOSFETs · TO-252

WGD30N10 from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V with a typical threshold of 1.8 V (1.3 V min, 2.5 V max) at VDS=VGS, ID=250 µA.
2 D passive Drain; drain-source voltage rated 100 V with continuous drain current of 30 A at TC=25℃ (21 A at TC=100℃).
3 S passive Source; connected to the source of the N-channel MOSFET, with continuous body diode forward current of 30 A.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.3 1.8 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 43 46 mΩ VGS=10V, ID=20A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=10A 2
Diode Forward Current IS 30 A 2
Drain-Source Voltage VDSS 100 V Tc=25℃ 1
Drain Current ID 30 A TC=25℃ 1
Drain Current ID 21 A TC=100℃ 1
Gate Threshold Voltage (as printed; gate-source rating) VGS(TH) -20 20 V Tc=25℃ 1
Single Pulse Avalanche Energy EAS 256 mJ note1 1
Avalanche Current IAR 30 A note2 1
Power Dissipation PD 85 W Tc=25℃ 1
Junction Temperature Tj 175 ℃ MAX 1
Storage Temperature Tstg -55 175 ℃ 1
Maximum lead temperature for soldering TL 300 ℃ 1/8" from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 1.8 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 65 ℃/W 1
Thermal Resistance, Case to Sink RθCS 110 ℃/W 1
Forward Transconductance gFS 15 S VDS=5V,ID=10A 2
Input Capacitance Clss 2356 PF VDS=50V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 94 PF VDS=50V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 83.3 PF VDS=50V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 7 nS VDD=50V,RL=5Ω,VGS=10V,RGEN=3Ω 2
Turn-on Rise Time tr 7 nS VDD=50V,RL=5Ω,VGS=10V,RGEN=3Ω 2
Turn-Off Delay Time td(off) 29 nS VDD=50V,RL=5Ω,VGS=10V,RGEN=3Ω 2
Turn-Off Fall Time tf 7 nS VDD=50V,RL=5Ω,VGS=10V,RGEN=3Ω 2
Total Gate Charge Qg 61.7 nC VDS=50V,ID=10A, VGS=10V 2
Gate-Source Charge Qgs 8.3 nC VDS=50V,ID=10A, VGS=10V 2
Gate-Drain Charge Qgd 16.7 nC VDS=50V,ID=10A, VGS=10V 2
Reverse Recovery Time trr 32 nS TJ = 25°C, IF = 10A, di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 53 nC TJ = 25°C, IF = 10A, di/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: WGD30N10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wgd30n10-etched.step / wgd30n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgd30n10.step / wgd30n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (6 pp, sha256 e6e9ffb7ad550084, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF