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WGD30N06S

Wild Goose · MOSFETs · TO-252

WGD30N06S from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate-body leakage is specified with VGS=±20V, and gate threshold VGS(th) is 1.2 V min, 1.6 V typ, 2.5 V max at ID=250μA.
2 Drain passive Drain-source voltage VDSS is rated 60 V, with drain current ID of 30 A at TC=25℃ and 21 A at TC=100℃.
3 Source passive Diode forward current IS is rated 30 A at VGS=0V, IS=30A, with diode forward voltage VSD of 1.2 V typical.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 1
Drain Current ID 30 A TC=25℃ 1
Drain Current ID 21 A TC=100℃ 1
Gate Threshold Voltage (absolute maximum row, value ±20 V as printed) VGS(TH) -20 20 V 1
Junction Temperature (MAX) Tj 175 ℃ 1
Storage Temperature Tstg -55 175 ℃ 1
Maximum lead temperature for soldering purpose TL 300 ℃ 1/8 inch from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 3.3 ℃/W 1
Thermal Resistance, Case to Sink RθCS 110 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 24 35 mΩ VGS=10V, ID=30A 2
Forward Transconductance gFS 11 S VDS=5V,ID=5A 2
Diode Forward Current IS 30 A 2
Output Capacitance Coss 70 pF VDS=15V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 6 nS VDD=30V, VGS=10V, RG=3Ω 2
Turn-on Rise Time tr 6.1 nS VDD=30V, VGS=10V, RG=3Ω 2
Turn-Off Delay Time td(off) 17 nS VDD=30V, VGS=10V, RG=3Ω 2
Turn-Off Fall Time tf 3 nS VDD=30V, VGS=10V, RG=3Ω 2
Total Gate Charge Qg 25.3 nC VDS=30V,ID=15A, VGS=10V 2
Gate-Source Charge Qgs 4.7 nC VDS=30V,ID=15A, VGS=10V 2
Gate-Drain Charge Qgd 6.1 nC VDS=30V,ID=15A, VGS=10V 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=30A 2
Reverse Recovery Time trr 29.5 nS TJ = 25°C, IF =30A, di/dt = 100A/μs (Note 3) 2
Reverse Recovery Charge Qrr 50 nC TJ = 25°C, IF =30A, di/dt = 100A/μs (Note 3) 2

CAD (KiCad official)

  • Symbol: WGD30N06S
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wgd30n06s-etched.step / wgd30n06s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgd30n06s.step / wgd30n06s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (6 pp, sha256 4cce8dc673fd54f1, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF