# WGD2N65SE

**Wild Goose** · MOSFETs · TO-252

WGD2N65SE from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate (G) | input | Gate terminal of the MOSFET; the absolute maximum gate-source voltage VGSS is ±30 V. |
| 2 | Drain (D) | passive | Drain terminal of the MOSFET; the datasheet rates drain-source voltage VDSS at 650 V and drain current ID at 2 A (TC=25℃). |
| 3 | Source (S) | passive | Source terminal of the MOSFET; the datasheet gives a maximum diode forward current IS of 2 A and pulsed forward current ISM of 8 A for the body diode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 650 | V |  | 1 |
| Drain Current | ID |  |  | 2 | A | TC=25℃ | 1 |
| Drain Current | ID |  |  | 1.5 | A | TC=100℃ | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 120 | mJ | note 1 | 1 |
| Avalanche Current | IAR |  |  | 2 | A | note 2 | 1 |
| Power Dissipation | PD |  |  | 40 | W | Ta=25℃ | 1 |
| Junction Temperature (Max) | Tj |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Maximum lead temperature for soldering | TL |  |  | 300 | ℃ | 1/8 in from case for 5 seconds | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 2.87 | ℃/W |  | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 50 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 650 |  |  | V | ID=250μA, VGS=0 | 2 |
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ |  | 0.4 |  | V/℃ | ID=250μA, Reference to 25℃ | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=650V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | μA | VDS=520V, TC=125℃ | 2 |
| Gate-body leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS=+30V, VDS=0V | 2 |
| Gate-body leakage Current, Reverse | IGSSR |  |  | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | ID=250μA, VDS=VGS | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 4.4 | 4.8 | Ω | ID=1A, VGS=10V | 2 |
| Input Capacitance | Ciss |  | 270 | 350 | pF | VDS=25V, VGS=0, f=1.0MHz | 2 |
| Output Capacitance | Coss |  | 40 | 50 | pF | VDS=25V, VGS=0, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 5 | 7 | pF | VDS=25V, VGS=0, f=1.0MHz | 2 |
| Turn-On Delay Time | Td(on) |  | 10 | 30 | ns | VDD=325V, ID=2A, RG=25Ω (Note 3,4) | 2 |
| Turn-On Rise Time | Tr |  | 25 | 60 | ns | VDD=325V, ID=2A, RG=25Ω (Note 3,4) | 2 |
| Turn-Off Delay Time | Td(off) |  | 20 | 50 | ns | VDD=325V, ID=2A, RG=25Ω (Note 3,4) | 2 |
| Turn-Off Rise Time | Tf |  | 25 | 60 | ns | VDD=325V, ID=2A, RG=25Ω (Note 3,4) | 2 |
| Total Gate Charge | Qg |  | 90 | 110 | nC | VDS=520V, VGS=10V, ID=2A (Note 3,4) | 2 |
| Gate-Source Charge | Qgs |  | 1.6 |  | nC | VDS=520V, VGS=10V, ID=2A (Note 3,4) | 2 |
| Gate-Drain Charge | Qgd |  | 4.3 |  | nC | VDS=520V, VGS=10V, ID=2A (Note 3,4) | 2 |
| Max. Diode Forward Current | Is |  |  | 2 | A |  | 2 |
| Max. Pulsed Forward Current | ISM |  |  | 8 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.5 | V | ID=2A | 2 |
| Reverse Recovery Time | Trr |  | 180 |  | ns | IS=2A, VGS=0V, diF/dt=100A/μs (Note3) | 2 |
| Reverse Recovery Charge | Qrr |  | 0.72 |  | μC | IS=2A, VGS=0V, diF/dt=100A/μs (Note3) | 2 |

## CAD (KiCad official)

- Symbol: `WGD2N65SE`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `wgd2n65se-etched.step` / `wgd2n65se-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wgd2n65se.step` / `wgd2n65se.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wild Goose datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603093051913498624) (7 pp, sha256 `89f7da129bf8b0fc`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wgd2n65se-datasheet.pdf)