component
WGD20N06S
Public Made by Adomby adom
Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWGD20N06S
Wild Goose · MOSFETs · TO-252
WGD20N06S from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate (G) terminal of the 60V N-channel MOSFET, with a gate-source voltage rating of ±20 V in the absolute maximum ratings. |
| 2 | Drain | passive | Drain (D) terminal of the 60V N-channel MOSFET, rated for a drain current of 20 A at TC=25℃ and a drain-source voltage of 60 V. |
| 3 | Source | passive | Source (S) terminal of the N-channel MOSFET (printed as "Sourse" in the datasheet), serving as the reference for the gate-source voltage. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 1 | |||
| Drain Current (TC=25℃) | ID | 20 | A | TC=25℃ | 1 | ||
| Gate-Source Voltage (printed as Gate Threshold Voltage row in Absolute Maximum Ratings) | VGS(TH) | -20 | 20 | V | 1 | ||
| Junction Temperature (MAX) | Tj | 175 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 175 | ℃ | 1 | ||
| Maximum lead temperature for soldering purpose | TL | 300 | ℃ | 1/8 inch from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 3.3 | ℃/W | 1 | |||
| Thermal Resistance, Case to Sink | RθCS | 110 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 24 | 35 | mΩ | VGS=10V, ID=10A | 2 | |
| Forward Transconductance | gFS | 11 | S | VDS=5V,ID=5A | 2 | ||
| Diode Forward Current | IS | 20 | A | 2 | |||
| Output Capacitance | Coss | 70 | PF | VDS=15V,VGS=0V,F=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 6 | nS | VDD=30V, VGS=10V,RG=3Ω | 2 | ||
| Turn-on Rise Time | tr | 6.1 | nS | VDD=30V, VGS=10V,RG=3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 17 | nS | VDD=30V, VGS=10V,RG=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 3 | nS | VDD=30V, VGS=10V,RG=3Ω | 2 | ||
| Total Gate Charge | Qg | 25.3 | nC | VDS=30V,ID=10A, VGS=10V | 2 | ||
| Gate-Drain Charge | Qgd | 6.1 | nC | VDS=30V,ID=10A, VGS=10V | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=20A | 2 | ||
| Reverse Recovery Time | trr | 29.5 | nS | TJ = 25°C, IF =20A, di/dt = 100A/μs(Note3) | 2 | ||
| Reverse Recovery Charge | Qrr | 50 | nC | TJ = 25°C, IF =20A, di/dt = 100A/μs(Note3) | 2 |
CAD (KiCad official)
- Symbol:
WGD20N06S - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wgd20n06s-etched.step/wgd20n06s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wgd20n06s.step/wgd20n06s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (6 pp, sha256
c4a68b5797c0a35c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).