# WGD15N10

**Wild Goose** · MOSFETs · TO-252

WGD15N10 from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 100V N-channel MOSFET; gate-source voltage is rated at ±20 V. |
| 2 | D | passive | Drain terminal, rated for 100 V drain-source voltage and 15 A continuous drain current at TC=25℃. |
| 3 | S | passive | Source terminal, the reference for the gate drive, rated for 15 A continuous diode forward current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 15 | A |  | 1 |
| Drain Current-Continuous (TC=100℃) | ID (100℃) |  |  | 6.5 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 58 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 30 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 150 | mJ | Note 5: Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 4.17 | ℃/W | Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 | 110 |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 95 | 110 | mΩ | VGS=10V, ID=5A | 2 |
| Forward Transconductance | gFS | 3.5 |  |  | S | VDS=25V,ID=6A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=9A | 2 |
| Diode Forward Current | IS |  |  | 15 | A | Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec | 2 |

## CAD (KiCad official)

- Symbol: `WGD15N10`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `wgd15n10-etched.step` / `wgd15n10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wgd15n10.step` / `wgd15n10.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wild Goose datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8600800948075835392) (6 pp, sha256 `c81bdf622ffc8f33`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wgd15n10-datasheet.pdf)