component
WGD120N03
Public Made by Adomby adom
Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| wgd120n03-etched.glb | 17d ago |
| wgd120n03-etched.step | 17d ago |
| wgd120n03-hero.glb | 17d ago |
| wgd120n03-hero.overlay.json | 17d ago |
| wgd120n03.glb | 17d ago |
| wgd120n03.kicad_mod | 17d ago |
| wgd120n03.kicad_sym | 17d ago |
| wgd120n03.lbr | 17d ago |
| wgd120n03.step | 17d ago |
WGD120N03
Wild Goose · MOSFETs · TO-252
WGD120N03 from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate (G) terminal of the 30 V N-channel MOSFET; the datasheet gives a gate-source voltage limit of ±20 V in its absolute maximum ratings. |
| 2 | Drain | passive | Drain (D) terminal, rated for a drain-source voltage of 30 V and a drain current of 120 A at Tj=25℃ per the absolute maximum ratings. |
| 3 | Source | passive | Source (S) terminal, the reference for the gate-source and drain-source ratings given in the absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | 1 | |||
| Drain Current | ID | 120 | A | Tj=25℃ | 1 | ||
| Drain Current | ID | 70 | A | Tj=100℃ | 1 | ||
| Gate Threshold Voltage (printed label; symbol is gate-source voltage) | VGSS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 350 | mJ | see note 5: Tj=25℃, VDD=15V, VG=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Pulsed Drain Current | IDM | 400 | A | 1 | |||
| Power Dissipation | PD | 110 | W | Tj=25℃ | 1 | ||
| Junction Temperature (Max) | Tj | 175 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 175 | ℃ | 1 | ||
| Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds | TL | 300 | 1/8" from case for 5 seconds | 1 | |||
| Thermal Resistance, Junction to Case | RθJC | 1.36 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 3 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 3.3 | 4.2 | mΩ | VGS=10V, ID=20A | 2 | |
| Forward Transconductance | gFS | 50 | S | VDS=10V,ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=20A | 2 | ||
| Diode Forward Current | IS | 120 | A | 2 |
CAD (KiCad official)
- Symbol:
WGD120N03 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wgd120n03-etched.step/wgd120n03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wgd120n03.step/wgd120n03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (6 pp, sha256
b1a4969a6b33b6b7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).