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WGD10N50SE

Wild Goose · MOSFETs · TO-252

WGD10N50SE from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate (G) input Gate terminal of the MOSFET; the gate-source voltage is rated at ±30 V (VGSS) in the absolute maximum ratings.
2 Drain (D) passive Drain terminal; the drain-source voltage is rated at 500 V (VDSS) and the continuous drain current at 10.0 A at Tj=25℃ (5.7 A at Tj=100℃).
3 Source (S) passive Source terminal; the maximum continuous body-diode forward current is 10 A and the pulsed body-diode forward current is 40 A (ISM).

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 500 V ID=250μA, VGS=0 2
Zero Gate Voltage Drain Current IDSS 1 μA Vds=500V, Vgs=0V 2
Zero Gate Voltage Drain Current IDSS 10 μA Vds=400V, Tc=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA Vgs=+30V, Vds=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA Vgs=-30V, Vds=0V 2
Gate Threshold Voltage VGS(th) 2 4 V Id=250uA, Vds=Vgs 2
Static Drain-Source On-Resistance RDS(on) 0.65 0.7 Ω Id=5.0A, Vgs=10V 2
Turn-On Delay Time Td(on) 25 60 nS VDD=250V, ID=10A, RG=25Ω (Note 3,4) 2
Turn-On Rise Time Tr 95 200 nS VDD=250V, ID=10A, RG=25Ω (Note 3,4) 2
Turn-Off Delay Time Td(off) 55 120 nS VDD=250V, ID=10A, RG=25Ω (Note 3,4) 2
Turn-Off Fall Time Tf 60 130 nS VDD=250V, ID=10A, RG=25Ω (Note 3,4) 2
Total Gate Charge Qg 28 36 nC VDS=400, VGS=10V, ID=10A (Note 3,4) 2
Maximum Continuous Drain-Source Diode Forward Current IS 10 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 40 A 2
Drain-Source Diode Forward Voltage VSD 1.45 V Id=10A 2
Drain-Source Voltage VDSS 500 V 1
Drain Current ID 10 A Tj=25℃ 1
Drain Current ID 5.7 A Tj=100℃ 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulse Avalanche Energy EAS 190 mJ note1 1
Avalanche Current IAR 10 A note2 1
Power Dissipation PD 30 W Tj=25℃ 1
Junction Temperature Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering purpose TL 300 ℃ 1/8 inch from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 1.88 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1

CAD (KiCad official)

  • Symbol: WGD10N50SE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wgd10n50se-etched.step / wgd10n50se-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgd10n50se.step / wgd10n50se.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (7 pp, sha256 3d97c2cfd8e49b34, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF