component

WGD100N03

Public Made by Adom

by adom

Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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README.md Publish 0.1.0 · Ray 8d ago
wgd100n03-etched.glb Publish 0.1.0 · Ray 8d ago
wgd100n03-etched.step wgd100n03: factory component page (tier=lcsc) · Ray 8d ago
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wgd100n03.glb Publish 0.1.0 · Ray 8d ago
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WGD100N03

Wild Goose · MOSFETs · TO-252

WGD100N03 from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V (absolute maximum).
2 D passive Drain terminal; drain-source voltage is rated at 30 V with 100 A continuous drain current at TA=25°C.
3 S passive Source terminal, the reference for the gate-source voltage (VGS limited to ±20 V).

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 100 A 1
Drain Current-Continuous(TC=100℃) ID (100℃) 59 A TC=100℃ 1
Pulsed Drain Current IDM 360 A 1
Maximum Power Dissipation PD 68 W 1
Single pulse avalanche energy (Note 5) EAS 95 mJ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS =30V, VGS = 0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS =0V, VGS = ±20V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS= VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 5 5.5 mΩ VGS =10V, ID =20A 2
Static Drain-Source on-Resistance RDS(on) 6.7 9.5 mΩ VGS =4.5V, ID =20A 2
Maximum Continuous Drain to Source Diode Forward Current IS 100 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 400 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS = 0V, IS=30A 2
Thermal Resistance, Junction-to-Case RθJC 2.2 ℃/W 1

CAD (KiCad official)

  • Symbol: WGD100N03
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wgd100n03-etched.step / wgd100n03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgd100n03.step / wgd100n03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (6 pp, sha256 5acb0a40a97b1724, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF