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WG2310

Wild Goose · MOSFETs · SOT-23

WG2310 from Wild Goose, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the N-channel MOSFET, rated for a gate-source voltage VGS of ±20 V per the maximum ratings.
2 SOURCE passive Source terminal; the datasheet rates the continuous source-drain diode current IS at 0.8 A in the maximum ratings table.
3 DRAIN passive Drain terminal, rated for a drain-source voltage VDS of 60 V and a continuous drain current ID of 3 A.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 3 A 1
Pulsed Diode Current IDM 10 A 1
Continuous Source-Drain Current (Diode Conduction) IS 0.8 A 1
Power Dissipation PD 1.25 W 1
Thermal Resistance from Junction to Ambient RθJA 357 ℃/W t≤5s 1
Operating Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Drain-source breakdown voltage V(BR)DSS 60 V VGS = 0V, ID = 250µA 2
Gate-source threshold voltage VGS(th) 0.9 2 V VDS =VGS, ID = 250µA 2
Gate-source leakage IGSS -100 100 nA VDS =0V, VGS = ±20V 2
Zero gate voltage drain current IDSS 1 µA VDS = 60V, VGS =0V 2
Drain-source on-state resistance RDS(on) 72 95 mΩ VGS = 10V, ID = 3 A 2
Drain-source on-state resistance RDS(on) 82 100 mΩ VGS = 4.5V, ID = 2 A 2
Diode forward voltage VSD 0.8 1.2 V IS=1A,VGS=0V 2
Turn-on delay time td(on) 7 15 ns VDD= 10V, RL=10Ω, ID ≈ 1A, VGEN= 4.5V, Rg=6Ω 2
Rise time tr 15 20 ns VDD= 10V, RL=10Ω, ID ≈ 1A, VGEN= 4.5V, Rg=6Ω 2
Turn-off delay time td(off) 15 25 ns VDD= 10V, RL=10Ω, ID ≈ 1A, VGEN= 4.5V, Rg=6Ω 2
Fall time tf 10 20 ns VDD= 10V, RL=10Ω, ID ≈ 1A, VGEN= 4.5V, Rg=6Ω 2
Continuous Source-Drain Diode Current IS 1.2 A Tc=25℃ 2
Pulsed Diode forward Current ISM 20 A 2
Forward transconductance gfs 7 S VDS = 4.5V, ID = 3A 2
Input capacitance Ciss 247 pF VDS = 10V, VGS =0V, f=1MHz 2
Output capacitance Coss 34 pF VDS = 10V, VGS =0V, f=1MHz 2
Reverse transfer capacitance Crss 20 pF VDS = 10V, VGS =0V, f=1MHz 2
Total gate charge Qg 6 nC VDS = 10V, VGS = 4.5V, ID = 3A 2
Gate-source charge Qgs 1 nC VDS = 10V, VGS = 4.5V, ID = 3A 2
Gate-drain charge Qgd 1.3 nC VDS = 10V, VGS = 4.5V, ID = 3A 2
Gate resistance Rg 5 Ω f=1MHz 2

CAD (KiCad official)

  • Symbol: WG2310
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: wg2310-etched.step / wg2310-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wg2310.step / wg2310.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (4 pp, sha256 efda94fdc4d58a7f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF