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Generated by kicad-footprint-generator · KiCad file format 20260206

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W332-VB

VBsemi Elec · MOSFETs · SO-8

W332-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S1	passive	Source of the N-channel MOSFET (30 V VDS rating, 8 A package-limited continuous drain current).
2	G1	input	Gate of the N-channel MOSFET, rated for ±20 V gate-source voltage.
3	S2	passive	Source of the P-channel MOSFET (-30 V VDS rating, -8 A package-limited continuous drain current).
4	G2	input	Gate of the P-channel MOSFET, rated for ±20 V gate-source voltage.
5	D2	passive	Drain of the P-channel MOSFET, tied internally with pin 6 (-30 V VDS, 40 A pulsed drain current).
6	D2	passive	Drain of the P-channel MOSFET, tied internally with pin 5 (-30 V VDS, 40 A pulsed drain current).
7	D1	passive	Drain of the N-channel MOSFET, tied internally with pin 8 (30 V VDS, 40 A pulsed drain current).
8	D1	passive	Drain of the N-channel MOSFET, tied internally with pin 7 (30 V VDS, 40 A pulsed drain current).

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	SO-8
Category	Triode/MOS Tube/Transistor
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage (N-Ch)	VDS			30	V	TA = 25 °C	1
Drain-Source Voltage (P-Ch)	VDS			-30	V	TA = 25 °C	1
Gate-Source Voltage	VGS	-20		20	V	N-Ch and P-Ch	1
Pulsed Drain Current (N-Ch)	IDM			40	A	10 µs pulse width	1
Pulsed Drain Current (P-Ch)	IDM			-40	A	10 µs pulse width	1
Single Pulse Avalanche Current (N-Ch)	IAS			10	A	L = 0.1 mH	1
Single Pulse Avalanche Current (P-Ch)	IAS			20	A	L = 0.1 mH	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Junction-to-Ambient Thermal Resistance (N-Ch)	RthJA		50	62.5	°C/W	t ≤ 10 s, surface mounted on 1" x 1" FR4	1
Junction-to-Ambient Thermal Resistance (P-Ch)	RthJA		47	62.5	°C/W	t ≤ 10 s, surface mounted on 1" x 1" FR4	1
Junction-to-Foot Thermal Resistance (N-Ch)	RthJF		30	40	°C/W	Steady state	1
Junction-to-Foot Thermal Resistance (P-Ch)	RthJF		29	38	°C/W	Steady state	1
Gate-Body Leakage (N-Ch)	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 12 V	2
Gate-Body Leakage (P-Ch)	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 12 V	2
Zero Gate Voltage Drain Current (N-Ch)	IDSS			1	µA	VDS = 30 V, VGS = 0 V	2
Zero Gate Voltage Drain Current (P-Ch)	IDSS			-1	µA	VDS = - 30 V, VGS = 0 V	2
Zero Gate Voltage Drain Current (N-Ch, 55 °C)	IDSS			10	µA	VDS = 30 V, VGS = 0 V, TJ = 55 °C	2
Zero Gate Voltage Drain Current (P-Ch, 55 °C)	IDSS			-10	µA	VDS = - 30 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current (N-Ch)	ID(on)	20			A	VDS = 5 V, VGS = 10 V	2
On-State Drain Current (P-Ch)	ID(on)	-20			A	VDS = - 5 V, VGS = - 10 V	2
Drain-Source On-State Resistance (P-Ch)	RDS(on)			0.04	Ω	VGS = - 10 V, ID = - 8 A	2
Drain-Source On-State Resistance (N-Ch)	RDS(on)			0.02	Ω	VGS = 8 V, ID = 6.7 A	2
Drain-Source On-State Resistance (P-Ch)	RDS(on)			0.044	Ω	VGS = - 8 V, ID = - 6.5 A	2
Drain-Source On-State Resistance (N-Ch)	RDS(on)			0.024	Ω	VGS = 4.5 V, ID = 6.6 A	2
Drain-Source On-State Resistance (P-Ch)	RDS(on)			0.05	Ω	VGS = - 4.5 V, ID = - 5 A	2
Forward Transconductance (N-Ch)	gfs		27		S	VDS = 15 V, ID = 6.8 A	2
Forward Transconductance (P-Ch)	gfs		25		S	VDS = - 15 V, ID = - 6.7 A	2
Total Gate Charge (P-Ch)	Qg		41.5	63	nC	VDS = - 20 V, VGS = - 10 V, ID = - 10 A	2
Gate Resistance (P-Ch)	Rg	1.2	5.7	9.6	Ω	f = 1 MHz	2
Body Diode Voltage (N-Ch)	VSD		0.81	1.2	V	IS = 5.4 A	3
Body Diode Voltage (P-Ch)	VSD		-0.77	-1.2	V	IS = - 2 A	3
Continuous Source-Drain Diode Current (N-Ch)	IS			2.6	A	TC = 25 °C	3
Continuous Source-Drain Diode Current (P-Ch)	IS			-2.6	A	TC = 25 °C	3
Body Diode Reverse Recovery Time (P-Ch)	trr		31	57	ns	IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C	3
Body Diode Reverse Recovery Charge (N-Ch)	Qrr		10	17	nC	IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C	3
Body Diode Reverse Recovery Charge (P-Ch)	Qrr		29	47	nC	IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C	3
Turn-On Delay Time (P-Ch)	td(on)		10	16	ns	VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω	3
Rise Time (P-Ch)	tr		9	15	ns	VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω	3
Fall Time (P-Ch)	tf		10	16	ns	VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω	3

CAD (KiCad official)

Symbol: W332-VB
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SO-8 (KiCad packages3D, STEP)
3D model files: w332-vb-etched.step / w332-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); w332-vb.step / w332-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (14 pp, sha256 e0619989d71a5feb, retrieved 2026-10-27, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF