component
W25Q40EWSNIG
Public Made by Adomby adom
Winbond Elec NOR FLASH, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownW25Q40EWSNIG
Winbond Elec · NOR FLASH · SOIC-8
W25Q40EWSNIG from Winbond Elec, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | /CS | input | Chip Select input; when high the device is deselected and the IO pins are high impedance, and bringing it low selects the device so instructions can be written and data read. |
| 2 | DO (IO1) | bidirectional | Data Output in Standard SPI (read on falling edge of CLK) and Data Input Output 1 for Dual and Quad SPI. |
| 3 | /WP (IO2) | bidirectional | Active-low Write Protect input that prevents the Status Register from being written, and becomes IO2 for Quad SPI when QE=1. |
| 4 | GND | power_in | Ground. |
| 5 | DI (IO0) | bidirectional | Data Input in Standard SPI (written on rising edge of CLK) and Data Input Output 0 for Dual and Quad SPI. |
| 6 | CLK | input | Serial Clock input that provides timing for serial input and output operations, with SPI clock frequencies up to 104MHz. |
| 7 | /HOLD (IO3) | bidirectional | Active-low Hold input that pauses the device while selected, and becomes IO3 for Quad SPI when QE=1. |
| 8 | VCC | power_in | Power supply, single 1.65V to 1.95V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winbond Elec |
| Package | SOIC-8 |
| Category | Memory |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Voltage (abs max) | VCC | -0.6 | 2.5 | V | 65 | ||
| Voltage Applied to Any Pin | VIO | -0.6 | V | Relative to Ground; upper limit printed as VCC+0.4 | 65 | ||
| Transient Voltage on any Pin | VIOT | -2 | V | <20nS Transient, relative to Ground; upper limit printed as VCC+2.0V | 65 | ||
| Storage Temperature | TSTG | -65 | 150 | °C | 65 | ||
| Electrostatic Discharge Voltage | VESD | -2000 | 2000 | V | Human Body Model | 65 | |
| Supply Voltage | VCC | 1.65 | 1.95 | V | FR = 104MHz, fR = 50MHz | 65 | |
| Ambient Temperature, Operating | TA | -40 | 85 | °C | Industrial | 65 | |
| VCC (min) to /CS Low | tVSL | 10 | µs | Characterized only | 66 | ||
| Time Delay Before Write Instruction | tPUW | 1 | 10 | ms | Characterized only | 66 | |
| Write Inhibit Threshold Voltage | VWI | 1 | 1.4 | V | Characterized only | 66 | |
| Input Capacitance | CIN | 6 | pF | VIN = 0V | 67 | ||
| Output Capacitance | Cout | 8 | pF | VOUT = 0V | 67 | ||
| Input Leakage | ILI | -2 | 2 | µA | 67 | ||
| I/O Leakage | ILO | -2 | 2 | µA | 67 | ||
| Standby Current | ICC1 | 10 | 25 | µA | /CS = VCC, VIN = GND or VCC | 67 | |
| Power-down Current | ICC2 | 0.5 | 7.5 | µA | /CS = VCC, VIN = GND or VCC | 67 | |
| Current Read Data / Dual / Quad 1MHz | ICC3 | 1 | 3 | mA | C = 0.1 VCC / 0.9 VCC, DO = Open | 67 | |
| Current Read Data / Dual / Quad 50MHz | ICC3 | 4 | 6 | mA | C = 0.1 VCC / 0.9 VCC, DO = Open | 67 | |
| Current Read Data / Dual Output / Quad Output Read 104MHz | Icc3 | 6 | 8 | mA | C = 0.1 VCC / 0.9 VCC, DO = Open | 67 | |
| Current Write Status Register | Icc4 | 15 | 20 | mA | /CS = VCC | 67 | |
| Current Page Program | Icc5 | 15 | 20 | mA | /CS = VCC | 67 | |
| Current Sector/Block Erase | Icc6 | 15 | 20 | mA | /CS = VCC | 67 | |
| Current Chip Erase | Icc7 | 15 | 20 | mA | /CS = VCC | 67 | |
| Input Low Voltage | Vil | -0.5 | V | Upper limit printed as VCC x 0.3 | 67 | ||
| Output Low Voltage | Vol | 0.2 | V | Iol = 100 µA | 67 | ||
| Clock frequency, all instructions except Read Data (03h) | FR | 0 | 104 | MHz | D.C. to 104 | 69 | |
| Clock frequency, Read Data (03h) | fR | 0 | 50 | MHz | D.C. to 50 | 69 | |
| Clock High, Low Time, all instructions except Read Data (03h) | tCLH1, tCLL1 | 4 | ns | 69 | |||
| Clock High, Low Time, Read Data (03h) | tCRLH, tCRLL | 8 | ns | 69 | |||
| /CS Active Setup Time relative to CLK | tSLCH | 5 | ns | 69 | |||
| /CS Not Active Hold Time relative to CLK | tCHSL | 5 | ns | 69 | |||
| Data In Setup Time | tDVCH | 2 | ns | 69 | |||
| Data In Hold Time | tCHDX | 5 | ns | 69 | |||
| /CS Active Hold Time relative to CLK | tCHSH | 5 | ns | 69 | |||
| /CS Not Active Setup Time relative to CLK | tSHCH | 5 | ns | 69 | |||
| /CS Deselect Time (Array Read to Array Read) | tSHSL1 | 10 | ns | 69 | |||
| /CS Deselect Time (Erase/Program to Read SR), Volatile Status Register Write Time | tSHSL2 | 50 | ns | 69 | |||
| Output Disable Time | tSHQZ | 7 | ns | Guaranteed by design/characterization | 69 | ||
| Clock Low to Output Valid | tCLQV1 | 6 | ns | 69 | |||
| Output Hold Time | tCLQX | 0 | ns | 70 | |||
| /HOLD Active Setup Time relative to CLK | tHLCH | 5 | ns | 70 | |||
| /HOLD Active Hold Time relative to CLK | tCHHH | 5 | ns | 70 | |||
| /HOLD Not Active Setup Time relative to CLK | tHHCH | 5 | ns | 70 | |||
| /HOLD Not Active Hold Time relative to CLK | tCHHL | 5 | ns | 70 | |||
| /HOLD to Output Low-Z | tHHQX | 7 | ns | Guaranteed by design/characterization | 70 | ||
| /HOLD to Output High-Z | tHLQZ | 12 | ns | Guaranteed by design/characterization | 70 | ||
| Write Protect Setup Time Before /CS Low | tWHSL | 20 | ns | Only for Write Status Register when SRP = 1 | 70 | ||
| Write Protect Hold Time After /CS High | tSHWL | 100 | ns | Only for Write Status Register when SRP = 1 | 70 | ||
| /CS High to Power-down Mode | tDP | 3 | µs | 70 | |||
| /CS High to Standby Mode without ID Read | tRES1 | 3 | µs | 70 | |||
| /CS High to Standby Mode with ID Read | tRES2 | 1.8 | µs | 70 | |||
| /CS High to next Instruction after Suspend | tSUS | 20 | µs | 70 | |||
| Write Status Register Time | tW | 1 | 15 | ms | 70 | ||
| Byte Program Time (First Byte) | tBP1 | 15 | 30 | µs | 70 | ||
| Additional Byte Program Time (After First Byte) | tBP2 | 2.5 | 5 | µs | 70 | ||
| Page Program Time | tPP | 0.4 | 0.8 | ms | Max with Page Program and 4KB Sector Erase cycling | 70 | |
| Sector Erase Time (4KB) | tSE | 45 | 400 | ms | 70 | ||
| Block Erase Time (32KB) | tBE1 | 150 | 800 | ms | 70 | ||
| Block Erase Time (64KB) | tBE2 | 180 | 1000 | ms | 70 | ||
| Chip Erase Time | tce | 1 | 4 | s | 70 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | 9.1 8-Pin SOIC 150-mil (Package Code SN)............................................................................ 72 9.2 8-Pin VSOP 150-mil (Package Code SV)........................................ | 4 |
CAD (KiCad official)
- Symbol:
W25Q40EWSNIG - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
w25q40ewsnig-etched.step/w25q40ewsnig-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);w25q40ewsnig.step/w25q40ewsnig.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winbond Elec datasheet (80 pp, sha256
8b6e02b80c9e5606, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).