component

W25N50

Public Made by Adom

by adom

Shandong Jingdao Microelectronics MOSFETs, TO-247-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsw25n50factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 13d ago
viewers w25n50: viewers · Ray 13d ago
package.json Publish 0.1.0 · Ray 13d ago
page.json Set visibility: public · Ray 13d ago
README.md Publish 0.1.0 · Ray 13d ago
w25n50-etched.glb Publish 0.1.0 · Ray 13d ago
w25n50-etched.step w25n50: factory component page (tier=lcsc) · Ray 13d ago
w25n50-hero.glb w25n50: hero GLB from the etched model (keeps the MPN mark) · Ray 13d ago
w25n50-hero.overlay.json Publish 0.1.0 · Ray 13d ago
w25n50.glb Publish 0.1.0 · Ray 13d ago
w25n50.kicad_mod Publish 0.1.0 · Ray 13d ago
w25n50.kicad_sym Publish 0.1.0 · Ray 13d ago
w25n50.lbr Publish 0.1.0 · Ray 13d ago
w25n50.step Publish 0.1.0 · Ray 13d ago

W25N50

Shandong Jingdao Microelectronics · MOSFETs · TO-247-3L

W25N50 from Shandong Jingdao Microelectronics, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET, rated for a gate-source voltage VGSS of ±30 V.
2 Drain passive Drain terminal, rated for a drain-source voltage VDSS of 500 V and a continuous drain current ID of 25 A.
3 Source passive Source terminal, the reference for the gate-source voltage and the drain-source breakdown voltage BVDSS of 500 V.

Key specifications

Parameter Value
Manufacturer Shandong Jingdao Microelectronics
Package TO-247-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 500 V VGS=0V,ID=250uA 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS,ID=250uA 2
Static Drain-Source On-State Resistance RDS(ON) 0.27 Ω VGS=10V,ID=12.5A 2
Drain-Source Leakage Current IDSS 1 uA VDS=500V,VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA Forward VGS=30V,VDS=0V; Reverse VGS=-30V,VDS=0V 2
Drain-Source Voltage VDSS 500 V 1
Gate-Source Voltage VGSS -30 30 V 1
Continuous Drain Current ID 25 A Tc=25℃ 1
Continuous Drain Current ID 17.6 A Tc=100℃ 1
Pulsed Drain Current IDM 100 A Note 2: pulse width limited by maximum junction temperature 1
Avalanche Energy Single Pulsed EAS 780 mJ Note 3: L=6.1mH, IAS=16A, VDD=50V, RG=25Ω, Starting TJ=25°C 1
Power Dissipation PD 219 W 1
Peak Diode Recovery dv/dt dv/dt 50 V/ns Note 4: ISD≤16A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C 1
Operation Junction and Storage Temperature Tj,Tstg -55 150 °C 1
Junction to Ambient Thermal Resistance RthJA 62.5 °C/W 1
Junction to Case Thermal Resistance RthJC 0.57 °C/W 1
Input Capacitance CISS 2660 pF VDS=25V, VGS=0V, f=1.0MHz 2
Output Capacitance COSS 220 pF VDS=25V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance CRSS 10.4 pF VDS=25V, VGS=0V, f=1.0MHz 2
Total Gate Charge QG 30 nC VDS=400V,VGS=10V,ID=25A,IG=1mA (NOTE1,2) 2
Gate-Drain Charge QGD 12 nC VDS=400V,VGS=10V,ID=25A,IG=1mA (NOTE1,2) 2
Gate-Source Charge QGS 8 nC VDS=400V,VGS=10V,ID=25A,IG=1mA (NOTE1,2) 2
Turn-On Delay Time tD(ON) 26 ns VDS=250V,VGS=10V,ID=25A,RG=25Ω (NOTE1,2) 2
Turn-On Rise Time tR 72 ns VDS=250V,VGS=10V,ID=25A,RG=25Ω (NOTE1,2) 2
Turn-Off Delay Time tD(OFF) 49 ns VDS=250V,VGS=10V,ID=25A,RG=25Ω (NOTE1,2) 2
Turn-Off Fall Time tF 40 ns VDS=250V,VGS=10V,ID=25A,RG=25Ω (NOTE1,2) 2
Maximum Body-Diode Continuous Current IS 16 A 2
Maximum Body-Diode Pulsed Current ISM 64 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V IS=25A,VGS=0V 2
Reverse Recovery Time trr 470 ns IS=25A,VGS=0V,di/dt=100A/us (NOTE1) 2
Reverse Recovery Charge Qrr 5 uC IS=25A,VGS=0V,di/dt=100A/us 2

CAD (KiCad official)

  • Symbol: W25N50
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3L (KiCad packages3D, STEP)
  • 3D model files: w25n50-etched.step / w25n50-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); w25n50.step / w25n50.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shandong Jingdao Microelectronics datasheet (8 pp, sha256 795d55ed264ab013, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF