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Contents

README

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VS3508AS

Vergiga(威兆) · IC · SOP-8

VS3508AS from Vergiga(威兆), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied with pins 2 and 3 (Source Pin1-3); drain-source breakdown voltage -30 V.
2 S passive Source of the P-channel MOSFET, tied with pins 1 and 3 (Source Pin1-3); continuous drain current -13 A at TA=25°C.
3 S passive Source of the P-channel MOSFET, tied with pins 1 and 2 (Source Pin1-3); diode continuous forward current -3 A.
4 G input Gate of the P-channel MOSFET (Gate Pin4); gate-source voltage rated ±20 V with threshold -1.0 to -2.5 V.
5 D passive Drain of the P-channel MOSFET, tied with pins 6-8 (Drain Pin 5-8); pulsed drain current -52 A.
6 D passive Drain of the P-channel MOSFET, tied with pins 5, 7 and 8 (Drain Pin 5-8); drain-source breakdown voltage -30 V.
7 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 8 (Drain Pin 5-8); RDS(on) typ 8.5 mΩ at VGS=-10 V.
8 D passive Drain of the P-channel MOSFET, tied with pins 5-7 (Drain Pin 5-8); RDS(on) typ 15 mΩ at VGS=-4.5 V.

Key specifications

Parameter Value
Manufacturer Vergiga(威兆)
Package SOP-8
Category
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V,VGS=0V 2
Zero Gate Voltage Drain Current (Tj=125℃) IDSS -100 μA VDS=-30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(TH) -1 -1.8 -2.5 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 8.5 10 mΩ VGS=-10V, ID=-10A 2
Drain-Source On-State Resistance RDS(ON) 15 18 mΩ VGS=-4.5V, ID=-6A 2
Forward on voltage VSD -0.83 -1.2 V ISD=-10A,VGS=0V 2
Continuous drain current @ TA=25°C (VGS=-10V) ID -13 A VGS=-10V, TA=25°C 1
Continuous drain current @ TA=100°C (VGS=-10V) ID -8.5 A VGS=-10V, TA=100°C 1
Pulse drain current IDM -52 A TA=25°C, tested ① 1
Diode continuous forward current IS -3 A TA=25°C 1
Avalanche energy, single pulsed EAS 81 mJ ② 1
Maximum power dissipation PD 3.1 W TA=25°C 1
Gate-Source voltage VGS -20 20 V 1
Storage and operating temperature range TSTG/TJ -55 150 °C 1
Thermal Resistance-Junction to Lead RθJL 24 °C/W 1
Thermal Resistance-Junction to Ambient RθJA 40 °C/W 1

CAD (KiCad official)

  • Symbol: VS3508AS
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: vs3508as-etched.step / vs3508as-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vs3508as.step / vs3508as.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vergiga(威兆) datasheet (6 pp, sha256 0986decd092a589e, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF