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VS-MBRS1100-M3

Public Made by Adom

by adom

Vishay Intertech Schottky Barrier Diodes (SBD), DO-214AA(SMB). Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.

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VS-MBRS1100-M3

Vishay Intertech · Schottky Barrier Diodes (SBD) · DO-214AA(SMB)

VS-MBRS1100-M3 from Vishay Intertech, in a DO-214AA(SMB). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2 A passive Anode.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package DO-214AA(SMB)
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum average forward current IF(AV) 1 A 50 % duty cycle at TL = 147 °C, rectangular waveform 1
Maximum peak one cycle non-repetitive surge current IFSM 870 A 5 μs sine or 3 μs rect. pulse, following any rated load condition and with rated VRRM applied 1
Maximum peak one cycle non-repetitive surge current IFSM 50 A 10 ms sine or 6 ms rect. pulse 1
Non-repetitive avalanche energy EAS 1 mJ TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1
Maximum DC reverse voltage VR 100 V VS-MBRS1100-M3 column 1
Maximum junction and storage temperature range TJ, TStg -55 175 °C 2
Maximum thermal resistance, junction to lead RthJL 36 °C/W DC operation, see fig. 4; mounted 1" square PCB 2
Maximum thermal resistance, junction to ambient RthJA 80 °C/W DC operation 2
Maximum forward voltage drop VFM 0.78 V See fig. 1; 1 A; TJ = 25 °C 2
Maximum forward voltage drop VFM 0.62 V See fig. 1; 1 A; TJ = 125 °C 2
Maximum reverse leakage current IRM 0.5 mA See fig. 2; TJ = 25 °C; VR = Rated VR 2
Maximum reverse leakage current IRM 1 mA See fig. 2; TJ = 125 °C; VR = Rated VR 2
Maximum voltage rate of change dV/dt 10000 V/μs Rated VR 2
Repetitive avalanche current IAR 0.5 A Current decaying linearly to zero in 1 μs; frequency limited by TJ maximum; VA = 1.5 x VR typical 1
Typical junction capacitance CT 42 pF VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 2
Typical series inductance LS 2 nH Measured lead to lead 5 mm from package body 2

CAD (KiCad official)

  • Symbol: VS-MBRS1100-M3
  • Footprint: Diode_SMD:D_SMB
  • 3D model: DO-214AA(SMB) (KiCad packages3D, STEP)
  • 3D model files: vs-mbrs1100-m3-etched.step / vs-mbrs1100-m3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vs-mbrs1100-m3.step / vs-mbrs1100-m3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (7 pp, sha256 acd54ea70a220322, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF