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Contents

README

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VS-30BQ100-M3

Vishay Intertech · Schottky Barrier Diodes (SBD) · DO-214AB(SMC)

VS-30BQ100-M3 from Vishay Intertech, in a DO-214AB(SMC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2 A passive Anode.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package DO-214AB(SMC)
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum average forward current, 50 % duty cycle at TL = 148 °C, rectangular waveform IF(AV) 3 A 50 % duty cycle at TL = 148 °C, rectangular waveform 1
Maximum average forward current, 50 % duty cycle at TL = 138 °C, rectangular waveform IF(AV) 4 A 50 % duty cycle at TL = 138 °C, rectangular waveform 1
Maximum peak one cycle non-repetitive surge current IFSM 800 A tp = 5 μs sine or 3 μs rect. pulse; following any rated load condition and with rated VRRM applied 1
Maximum peak one cycle non-repetitive surge current IFSM 70 A 10 ms sine or 6 ms rect. pulse; following any rated load condition and with rated VRRM applied 1
Non-repetitive avalanche energy EAS 3 mJ TJ = 25 °C, IAS = 1.0 A, L = 6 mH 1
Maximum DC reverse voltage VR 100 V 1
Maximum forward voltage drop, 3 A, TJ = 25 °C VFM 0.79 V 3 A, TJ = 25 °C; pulse width 300 μs, duty cycle 2 % 2
Maximum forward voltage drop, 6 A, TJ = 25 °C VFM 0.9 V 6 A, TJ = 25 °C; pulse width 300 μs, duty cycle 2 % 2
Maximum forward voltage drop, 3 A, TJ = 125 °C VFM 0.62 V 3 A, TJ = 125 °C; pulse width 300 μs, duty cycle 2 % 2
Maximum forward voltage drop, 6 A, TJ = 125 °C VFM 0.7 V 6 A, TJ = 125 °C; pulse width 300 μs, duty cycle 2 % 2
Maximum reverse leakage current, TJ = 25 °C IRM 0.5 mA TJ = 25 °C, VR = Rated VR 2
Maximum reverse leakage current, TJ = 125 °C IRM 5 mA TJ = 125 °C 2
Maximum junction capacitance CT 115 pF VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 2
Maximum voltage rate of change dV/dt 10000 V/μs Rated VR 2
Maximum junction and storage temperature range TJ (1), TStg -55 175 °C 2
Maximum thermal resistance, junction to lead RthJL 12 °C/W DC operation; mounted 1" square PCB 2
Maximum thermal resistance, junction to ambient RthJA 46 °C/W 2
Repetitive avalanche current IAR 0.5 A Current decaying linearly to zero in 1 μs; frequency limited by TJ maximum; VA = 1.5 x VR 1
Typical series inductance LS 3 nH Measured lead to lead 5 mm from package body 2

CAD (KiCad official)

  • Symbol: VS-30BQ100-M3
  • Footprint: Diode_SMD:D_SMC
  • 3D model: DO-214AB(SMC) (KiCad packages3D, STEP)
  • 3D model files: vs-30bq100-m3-etched.step / vs-30bq100-m3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vs-30bq100-m3.step / vs-30bq100-m3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (7 pp, sha256 4dd0f34126aa7d46, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF